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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RF081MM2STFTRRF081MM2STF IS THE HIGH RELIABIL Rohm Semiconductor |
2,917 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 800mA | 150°C (Max) | 980 mV @ 1 A |
|
VS-42HF160DIODE GEN PURP 1.6KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,449 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1600 V | 40A | -65°C ~ 160°C | 1.5 V @ 125 A | |
|
VS-71HF120DIODE GEN PURP 1.2KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,852 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 1200 V | 1200 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
1T4G R0GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
3,574 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
NRVTSM260EV2T1GDIODE SCHOTTKY 60V 2A POWERMITE onsemi |
3,117 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 12 µA @ 60 V | 60 V | 2A | -65°C ~ 175°C | 650 mV @ 2 A |
|
|
1T5G R0GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
2,865 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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SS2P3-M3/84ADIODE SCHOTTKY 30V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,972 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
|
1T6G R0GDIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation |
2,264 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
UF4001-E3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,406 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
1T7G R0GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
3,239 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
UF4003-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,424 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
S1DHM2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,974 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
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BYM11-600-E3/97DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,155 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
S1GHM2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
2,851 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
BYS11-90-E3/TRDIODE SCHOTTKY 90V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
2,798 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1.5A | -55°C ~ 150°C | 750 mV @ 1 A | |
|
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S1JHM2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
2,792 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
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1SS397TE85LFDIODE GEN PURP 400V 100MA SC70 Toshiba Semiconductor and Storage |
3,408 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 500 ns | 1 µA @ 400 V | 400 V | 100mA | 125°C (Max) | 1.3 V @ 100 mA | |
|
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S1M M2GDIODE GEN PURP 1000V 1A DO214AC Taiwan Semiconductor Corporation |
2,663 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 1000 V | - | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
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CDBW140-HFDIODE SCHOTTKY 1A 40V SOD-123 Comchip Technology |
3,090 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 4V, 1MHz | - | 1 µA @ 40 V | 40 V | 1A | - | 600 mV @ 1 A | ||
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US1A-E3/5ATDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,462 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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