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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FMXA-4206SDIODE GEN PURP 600V 20A TO3PF Sanken |
2,251 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 28 ns | 100 µA @ 600 V | 600 V | 20A | -40°C ~ 150°C | 1.98 V @ 10 A | |
|
JANTXV1N5809US/TRRECTIFIER UFR,FRR Microchip Technology |
2,598 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A | |
|
VS-42HF140DIODE GEN PURP 1.4KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,236 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1400 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
|
1N5828DIODE SCHOTTKY 40V 15A DO5 GeneSiC Semiconductor |
3,388 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis, Stud Mount | - | - | 10 mA @ 20 V | 40 V | 15A | -65°C ~ 150°C | 500 mV @ 15 A | |
|
VS-20ATS08-M3DIODE GEN PURP 800V 20A TO220AB Vishay General Semiconductor - Diodes Division |
2,233 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
MUR5020DIODE GEN PURP 200V 50A DO5 GeneSiC Semiconductor |
2,998 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 75 ns | 10 µA @ 50 V | 200 V | 50A | -55°C ~ 150°C | 1 V @ 50 A | |
|
S1JFPDIODE GP 600V 1.2A SOD-123HE onsemi |
3,025 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 0V, 1MHz | 1.5 µs | 5 µA @ 600 V | 600 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A |
|
BAT42WS-HE3-08DIODE SCHOTTKY 30V 200MA SOD323 Vishay General Semiconductor - Diodes Division |
3,044 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 650 mV @ 50 mA |
|
STPS2H100AFN100 V, 2 A POWER SCHOTTKY RECTIF STMicroelectronics |
3,750 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 µA @ 100 V | 100 V | 2A | 175°C | 790 mV @ 2 A | |
|
SD101AW-HE3-18DIODE SCHOTTKY 400MW 60V SOD123 Vishay General Semiconductor - Diodes Division |
3,620 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 1 ns | 200 nA @ 50 V | 60 V | 30mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA |
|
V2F6HM3/H2A,60V,SMF,TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division |
3,847 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 250pF @ 4V, 1MHz | - | 480 µA @ 60 V | 60 V | 2A | -40°C ~ 150°C | 600 mV @ 2 A |
|
|
SD101BW-HE3-18DIODE SCHOTTKY 400MW 50V SOD123 Vishay General Semiconductor - Diodes Division |
2,848 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2.1pF @ 0V, 1MHz | 1 ns | 200 nA @ 40 V | 50 V | 30mA (DC) | -55°C ~ 125°C | 950 mV @ 15 mA |
|
RSX201LAM30TRDIODE SCHOTTKY 30V 2A SOD128 Rohm Semiconductor |
3,382 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 30 V | 30 V | 2A | 150°C (Max) | 440 mV @ 2 A | |
|
IDH05SG60CXKSA2DIODE SCHOTTKY 600V 5A TO220-2 Infineon Technologies |
2,292 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 110pF @ 1V, 1MHz | 0 ns | 30 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 175°C | 2.3 V @ 5 A |
|
|
SD101CW-HE3-18DIODE SCHOTTKY 400MW 40V SOD123 Vishay General Semiconductor - Diodes Division |
2,364 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2.2pF @ 0V, 1MHz | 1 ns | 200 nA @ 30 V | 40 V | 30mA (DC) | -55°C ~ 125°C | 900 mV @ 15 mA |
|
MBRAF260T3GDIODE SCHOTTKY 60V 2A SMA-FL onsemi |
3,674 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 630 mV @ 2 A | |
|
VS-71HFR160DIODE GEN PURP 1.6KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,465 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 4.5 mA @ 1600 V | 1600 V | 70A | -65°C ~ 150°C | 1.46 V @ 220 A | |
|
|
SD101BW-HE3-08DIODE SCHOTTKY 400MW 50V SOD123 Vishay General Semiconductor - Diodes Division |
3,278 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 1 ns | 200 nA @ 40 V | 50 V | 30mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA |
|
SS23M RSGDIODE SCHOTTKY 30V 2A MICRO SMA Taiwan Semiconductor Corporation |
3,367 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 35pF @ 4V, 1MHz | - | 150 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 600 mV @ 2 A | |
|
|
SD101CW-HE3-08DIODE SCHOTTKY 400MW 40V SOD123 Vishay General Semiconductor - Diodes Division |
3,004 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 1 ns | 200 nA @ 30 V | 40 V | 30mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA |
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