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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NRVHPRS1KFASR SOD123FA PN 0.8A 800V onsemi |
2,330 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
BAT42W-G3-18DIODE SCHOTTKY 30V 200MA SOD123 Vishay General Semiconductor - Diodes Division |
3,340 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 650 mV @ 50 mA | |
|
BAS283-GS18DIODE SCHOTTKY 60V 30MA SOD80 Vishay General Semiconductor - Diodes Division |
3,713 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 1.6pF @ 1V, 1MHz | - | 200 nA @ 200 V | 60 V | 30mA | 125°C (Max) | 1 V @ 15 mA |
|
S3GB M4GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
2,543 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
AS3BJ-M3/5BTDIODE GEN PURP 600V 3A DO214AA Vishay General Semiconductor - Diodes Division |
3,577 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 20 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.05 V @ 3 A | |
|
|
ESH2B-M3/5BTDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,257 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A | |
|
|
NRVHPRS1MFASR SOD123FA PN 0.8A 1000V onsemi |
2,553 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
BAT46W-G3-18DIODE SCHOTTKY 100V 150MA SOD123 Vishay General Semiconductor - Diodes Division |
3,995 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 6pF @ 1V, 1MHz | - | 5 µA @ 75 V | 100 V | 150mA (DC) | 125°C (Max) | 1 V @ 250 mA | |
|
BAS83-GS18DIODE SCHOTTKY 60V 30MA SOD80 Vishay General Semiconductor - Diodes Division |
2,314 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 1.6pF @ 1V, 1MHz | - | 200 nA @ 60 V | 60 V | 30mA (DC) | 125°C (Max) | 1 V @ 15 mA |
|
|
S3JB M4GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
3,587 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
VS-3EJU06HM3/6BDIODE GEN PURP 600V 3A DO221AC Vishay General Semiconductor - Diodes Division |
2,991 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 3 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.35 V @ 3 A |
|
|
ESH2C-M3/5BTDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,195 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A | |
|
|
NRVHPRS1JFARECTIFIER 600V .8A onsemi |
2,002 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
|
BAT42W-G3-08DIODE SCHOTTKY 30V 200MA SOD123 Vishay General Semiconductor - Diodes Division |
3,424 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 650 mV @ 50 mA | |
|
SRT14HA1GDIODE SCHOTTKY 40V 1A TS-1 Taiwan Semiconductor Corporation |
3,833 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
SF24-TPDIODE GPP SUPER FAST 2A DO-15 Micro Commercial Co |
3,328 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 60pF @ 4V, 1MHz | 35 ns | - | 200 V | 2A | -55°C ~ 125°C | - | |
|
|
2A04-TPDIODE GEN PURP 400V 2A DO15 Micro Commercial Co |
3,144 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 20pF @ 4V, 1MHz | - | - | 400 V | 2A | -55°C ~ 150°C | - | |
|
HER307G-APDIODE GPP HE 3A DO-201AD Micro Commercial Co |
3,734 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 75 ns | - | 800 V | 3A | -55°C ~ 150°C | - | |
|
SBRT4U10LP-7DIODE SBR 10V 4A U-DFN2020-2 Diodes Incorporated |
3,236 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Super Barrier | Obsolete | Surface Mount | - | - | 200 µA @ 10 V | 10 V | 4A | -55°C ~ 150°C | 500 mV @ 4 A |
|
FR307G A0GDIODE GEN PURP 3A DO201AD Taiwan Semiconductor Corporation |
2,981 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.3 V @ 3 A |
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