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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF2L6G R0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
2,534 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
ES2DHM4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
2,543 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
ESH2C-M3/52TDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,111 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A | |
|
SE20AFDHM3/6BDIODE GEN PURP 200V 1.3A DO221AC Vishay General Semiconductor - Diodes Division |
3,926 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 200 V | 200 V | 1.3A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A |
|
SD101BWS-G3-18DIODE SCHOTTKY 150MW 50V SOD323 Vishay General Semiconductor - Diodes Division |
2,298 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2.1pF @ 0V, 1MHz | 1 ns | 200 nA @ 40 V | 50 V | 30mA (DC) | -55°C ~ 125°C | 950 mV @ 15 mA | |
|
S2BA M2GDIODE GEN PURP 100V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,710 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
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|
SE20PBHM3/85ADIODE GEN PURP 100V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
3,656 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 100 V | 100 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
|
ES2DVHM4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
3,152 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 20 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
|
|
ESH2D-M3/52TDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,793 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A | |
|
|
SE20AFGHM3/6BDIODE GEN PURP 400V 1.3A DO221AC Vishay General Semiconductor - Diodes Division |
2,507 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 400 V | 400 V | 1.3A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A |
|
|
SD101CWS-G3-18DIODE SCHOTTKY 50V 30MA SOD323 Vishay General Semiconductor - Diodes Division |
2,158 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2.1pF @ 0V, 1MHz | 1 ns | 200 nA @ 40 V | 50 V | 30mA (DC) | -55°C ~ 125°C | 950 mV @ 15 mA | |
|
|
S1PB-M3/85ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,266 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
SE20PDHM3/85ADIODE GEN PURP 200V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
3,859 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 200 V | 200 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
|
ES2FHM4GDIODE GEN PURP 300V 2A DO214AA Taiwan Semiconductor Corporation |
3,496 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
|
RBR3L30BDDTE25LOW VF, 30V, 3A, DO-214AC (SMA), Rohm Semiconductor |
3,902 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 80 µA @ 30 V | 30 V | 3A | 150°C | 530 mV @ 3 A | ||
|
|
SE20AFJHM3/6BDIODE GEN PURP 600V 1.3A DO221AC Vishay General Semiconductor - Diodes Division |
3,024 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 600 V | 600 V | 1.3A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A |
|
SD103AW-G3-18DIODE SCHOTTKY 350MA 40V SOD123 Vishay General Semiconductor - Diodes Division |
3,415 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 30 V | 40 V | 350mA (DC) | -55°C ~ 125°C | 600 mV @ 200 mA | |
|
SRA850 C0GDIODE SCHOTTKY 50V 8A TO220AC Taiwan Semiconductor Corporation |
2,893 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A | |
|
SRT19HA1GDIODE SCHOTTKY 90V 1A TS-1 Taiwan Semiconductor Corporation |
2,821 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
|
SF33-TPDIODE GPP HE 3A DO-201AD Micro Commercial Co |
3,424 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 100pF @ 4V, 1MHz | 35 ns | - | 150 V | 3A | -55°C ~ 125°C | - |
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