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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SE10PBHM3/84ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,759 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 780 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
RMPG06D-E3/100DIODE GPP 1A 200V 150NS MPG06 Vishay General Semiconductor - Diodes Division |
2,915 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
CMF03(TE12L,Q,M)DIODE GEN PURP 900V 500MA M-FLAT Toshiba Semiconductor and Storage |
3,300 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 50 µA @ 900 V | 900 V | 500mA | -40°C ~ 125°C | 2.5 V @ 500 mA | |
|
|
EU 1V0DIODE GEN PURP 400V 250MA AXIAL Sanken |
3,753 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 250mA | -40°C ~ 150°C | 2.5 V @ 250 mA | |
|
SBR10B45P5-13DDIODE SBR 45V 10A POWERDI5 Diodes Incorporated |
2,864 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SBR® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Super Barrier | Active | Surface Mount | - | - | 380 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 550 mV @ 10 A |
|
SR215HR0GDIODE SCHOTTKY 150V 2A DO204AC Taiwan Semiconductor Corporation |
3,062 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
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SE10PDHM3/84ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,718 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 780 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
JANTX1N6858-1SCHOTTKY DIODE Microchip Technology |
3,964 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/444 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 4.5pF @ 0V, 1MHz | - | 200 nA @ 50 V | 50 V | 75mA | -65°C ~ 150°C | 1 V @ 35 mA | |
|
RB521ZS-30T2R_1DIODE SCHOTTKY 100MA 8SMD Rohm Semiconductor |
3,971 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | - | - | 7 µA @ 10 V | 30 V | 100mA | 150°C | 370 mV @ 10 mA | |
|
JANTX1N5195/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,966 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/118 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 1 µA @ 200 V | 180 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
GF1G-9HE3_A/IDIODE GENERAL PURPOSE Vishay General Semiconductor - Diodes Division |
3,915 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
PX3746DDQSM1383XUMA1LED PX3746DDQSM1383XUMA1 Infineon Technologies |
3,679 | - |
RFQ |
Tray | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
RMPG06D-E3/53DIODE GPP 1A 200V 150NS MPG06 Vishay General Semiconductor - Diodes Division |
2,406 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
RBS3LAM40CTRDIODE SCHOTTKY PMDTM Rohm Semiconductor |
3,873 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 800 µA @ 20 V | 20 V | 3A | 125°C | 400 mV @ 3 A | |
|
|
EU 1V1DIODE GEN PURP 400V 250MA AXIAL Sanken |
2,148 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 250mA | -40°C ~ 150°C | 2.5 V @ 250 mA | |
|
MBRD8100TRDIODE SCHOTTKY 100V 8A DPAK SMC Diode Solutions |
3,120 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 1 mA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 900 mV @ 8 A | |
|
|
SR220HR0GDIODE SCHOTTKY 200V 2A DO204AC Taiwan Semiconductor Corporation |
3,158 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
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SE10PGHM3/84ADIODE GEN PURP 400V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,430 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 780 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
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RMPG06DHE3_A/53DIODE GPP 1A 200V 150NS MPG06 Vishay General Semiconductor - Diodes Division |
2,677 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
SB2H90-E3/73DIODE SCHOTTKY 90V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,094 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 10 µA @ 90 V | 90 V | 2A | -55°C ~ 175°C | 790 mV @ 2 A |
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