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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EU01ZV0DIODE GEN PURP 200V 250MA AXIAL Sanken |
2,438 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 200 V | 200 V | 250mA | -40°C ~ 150°C | 2.5 V @ 250 mA | |
|
NRVUS240VT3GDIODE GEN PURP 400V 2A SMB onsemi |
3,909 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 65 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.3 V @ 2 A |
|
ES1BHM3_A/H1A 100V SM ULTRAFAST RECT SMA Vishay General Semiconductor - Diodes Division |
2,233 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
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|
SE10PJHM3/84ADIODE GEN PURP 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,434 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 780 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
RMPG06G-E3/100DIODE GPP 1A 400V 150NS MPG06 Vishay General Semiconductor - Diodes Division |
2,474 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
FR305-APDIODE GP 50V 3A DO201AD Micro Commercial Co |
2,649 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 65pF @ 4V, 1MHz | 250 ns | - | 600 V | 3A | -55°C ~ 150°C | - | |
|
|
JANTX1N6858UR-1SCHOTTKY DIODE Microchip Technology |
2,209 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/444 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 4.5pF @ 0V, 1MHz | - | 200 nA @ 50 V | 50 V | 75mA | -65°C ~ 150°C | 650 mV @ 15 mA | |
|
RB521ZS-307EPT2RDIODE SCHOTTKY 100MA 8SMD Rohm Semiconductor |
3,098 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | - | - | 7 µA @ 10 V | 30 V | 100mA | 150°C | 370 mV @ 10 mA | ||
|
JANTXV1N6864US/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
2,861 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/620 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 80 V | 80 V | 3A | -65°C ~ 125°C | 700 mV @ 3 A | |
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|
US1J-E3S/61TDIODE GEN PURP 600V Vishay General Semiconductor - Diodes Division |
3,012 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
PX3746HDNSM1401XTMA1LED PX3746HDNSM1401XTMA1 Infineon Technologies |
2,477 | - |
RFQ |
Tray | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
FR306-APDIODE GP 50V 3A DO201AD Micro Commercial Co |
3,348 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 65pF @ 4V, 1MHz | 500 ns | - | 800 V | 3A | -55°C ~ 150°C | - | |
|
JANTXV1N483BSWITCHING DIODE Microchip Technology |
3,309 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/118 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 60 V | 70 V | 200mA | 175°C (Max) | 1 V @ 100 mA | |
|
RB520CM-40T2RDIODE SCHOTTKY 40V 100MA VMN2M Rohm Semiconductor |
2,503 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 15 µA @ 40 V | 40 V | 100mA | 150°C | 710 mV @ 100 mA | |
|
|
JANTX1N649-1/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,588 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/406 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 nA @ 600 V | 600 V | 400mA (DC) | -65°C ~ 175°C | 1 V @ 400 mA | |
|
V15PN50-5700M3/86ADIODE SCHOTTKY 50V 15A Vishay General Semiconductor - Diodes Division |
3,429 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 3 mA @ 50 V | 50 V | 15A | -40°C ~ 150°C | 560 mV @ 15 A | ||
|
|
PX8560EDSGR2ER1230AXUMA1LED PX8560EDSGR2ER1230AXUMA1 Infineon Technologies |
3,381 | - |
RFQ |
Tray | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
FR307-APDIODE GP 50V 3A DO201AD Micro Commercial Co |
2,620 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 65pF @ 4V, 1MHz | 500 ns | - | 1000 V | 3A | -55°C ~ 150°C | - | |
|
|
JANTXV1N4938-1SWITCHING DIODE Microchip Technology |
2,958 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/169 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 50 ns | 100 pA @ 175 V | 175 V | - | -65°C ~ 175°C | 1 V @ 30 mA | |
|
|
RB560SS-40T2RDIODE SCHOTTKY KMD2 Rohm Semiconductor |
2,929 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 40 µA @ 40 V | 40 V | 500mA | 150°C | 640 mV @ 500 mA |
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