+86 075582561136
Carregar BOM
Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-41HFR160MDIODE GEN PURP 1.6KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,094 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1600 V | 40A | -65°C ~ 160°C | 1.5 V @ 125 A | |
|
|
1N6077USDIODE GEN PURP 100V 6A D5B Microchip Technology |
2,547 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 5 µA @ 100 V | 100 V | 6A | -65°C ~ 155°C | 1.76 V @ 18.8 A | |
.jpg)
|
UFS340J/TR13DIODE GEN PURP 400V 3A DO214AB Microchip Technology |
2,453 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
MUR7040DIODE GEN PURP 400V 70A DO5 GeneSiC Semiconductor |
2,625 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 75 ns | 25 µA @ 50 V | 400 V | 70A | -55°C ~ 150°C | 1.3 V @ 70 A | |
|
|
VS-45EPS12L-M3RECTIFIER DIODE 45A 1200V TO-247 Vishay General Semiconductor - Diodes Division |
3,763 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 45A | -40°C ~ 150°C | 1.14 V @ 45 A | |
|
|
JANTXV1N5190DIODE GEN PURP 600V 3A AXIAL Microchip Technology |
2,943 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/297 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 2 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
JANTXV1N6628DIODE GEN PURP 660V 1.75A AXIAL Microchip Technology |
3,194 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 10V, 1MHz | 30 ns | 2 µA @ 660 V | 660 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A |
|
|
1N5711UBSCHOTTKY DIODE Microchip Technology |
3,423 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/444 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 200 nA @ 50 V | 50 V | 33mA (DC) | -65°C ~ 150°C | 1 V @ 15 mA |
|
|
UFS350J/TR13DIODE GEN PURP 500V 3A DO214AB Microchip Technology |
2,289 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 500 V | 500 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
MUR7060DIODE GEN PURP 600V 70A DO5 GeneSiC Semiconductor |
3,173 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 75 ns | 25 µA @ 50 V | 600 V | 70A | -55°C ~ 150°C | 1.7 V @ 70 A | |
|
|
VS-45APS12L-M3RECTIFIER DIODE 45A 1200V TO-247 Vishay General Semiconductor - Diodes Division |
2,998 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 45A | -40°C ~ 150°C | 1.14 V @ 45 A | |
|
JANTXV1N5617US/TRRECTIFIER UFR,FRR Microchip Technology |
3,473 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
UES1102/TRRECTIFIER UFR,FRR Microchip Technology |
2,369 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 975 mV @ 2 A | ||
|
|
1N5712UBSCHOTTKY DIODE Microchip Technology |
3,428 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
UFS360J/TR13DIODE GEN PURP 600V 3A DO214AB Microchip Technology |
2,033 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.2 V @ 3 A | |
|
|
JTXV1N6638300MA ULTRA FAST 150V Semtech Corporation |
3,879 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
VS-45EPS08L-M3NEW INPUT DIODES - TO-247 Vishay General Semiconductor - Diodes Division |
3,298 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 800 V | 800 V | 45A | -40°C ~ 150°C | 1.14 V @ 45 A | |
|
|
JAN1N3645DIODE GEN PURP 1.4KV 250MA AXIAL Microchip Technology |
2,854 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/279 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 1400 V | 1400 V | 250mA | -65°C ~ 175°C | 5 V @ 250 mA |
|
|
JANTXV1N4245D MET 1A STD 200V Semtech Corporation |
2,375 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 200 V | 200 V | 1A (DC) | - | 1.2 V @ 1 A |
|
|
JANTXV1N6626DIODE GEN PURP 220V 1.75A AXIAL Microchip Technology |
3,314 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 10V, 1MHz | 30 ns | 2 µA @ 220 V | 220 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
