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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SBR230LSTRDIODE SCHOTTKY 30V 2A SOD123 SMC Diode Solutions |
2,360 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 150pF @ 5V, 1MHz | - | 1 mA @ 40 V | 30 V | 2A | -55°C ~ 125°C | 750 mV @ 2 A | |
|
FFSH30120A1200V 30A SIC SBD onsemi |
2,241 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1740pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 46A (DC) | -55°C ~ 175°C | - | |
|
JANTXV1N6626/TRRECTIFIER UFR,FRR Microchip Technology |
2,932 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 10V, 1MHz | 30 ns | 2 µA @ 220 V | 220 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
LSIC2SD065C06ASIC SCHOTTKY DIODE 650V 6A TO252 Littelfuse Inc. |
2,079 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 18.5A (DC) | -55°C ~ 175°C | 1.8 V @ 6 A |
|
MUR5060DIODE GEN PURP 600V 50A DO5 GeneSiC Semiconductor |
3,600 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 90 ns | 10 µA @ 50 V | 600 V | 50A | -55°C ~ 150°C | 1 V @ 50 A | |
|
DLA40IM800PC-TUBPOWER DIODE DISCRETES-SCHOTTKY T IXYS |
3,761 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 400V, 1MHz | - | 10 µA @ 800 V | 800 V | 40A | -55°C ~ 175°C | 1.3 V @ 40 A | |
|
1N6075US/TRRECTIFIER UFR,FRR Microchip Technology |
2,007 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 1 µA @ 150 V | 150 V | 3A | -65°C ~ 155°C | 2.04 V @ 9.4 A | ||
|
|
JANTXV1N4248D MET 1A STD 800V HRV Semtech Corporation |
2,749 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 800 V | 800 V | 1A (DC) | - | 1.2 V @ 1 A |
|
|
UES1102SM/TRRECTIFIER UFR,FRR Microchip Technology |
3,726 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 3.5pF @ 6V, 1MHz | 25 ns | 2 µA @ 100 V | 100 V | 2.5A | 150°C (Max) | - | ||
|
RHRP3060-F102DIODE GEN PURP 600V 30A TO220-2 onsemi |
2,430 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 45 ns | 250 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.1 V @ 30 A | |
|
|
JAN1N3645D MET 250MA STD 2KV HR Semtech Corporation |
2,385 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/279 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 5V, 1MHz | 2.5 µs | 1 µA @ 2 V | 2 V | 600mA | -65°C ~ 175°C | 5 V @ 250 mA |
|
|
DMA10IM1600PZ-TUBPOWER DIODE DISCRETES-RECTIFIER IXYS |
2,743 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 400V, 1MHz | - | 10 µA @ 1600 V | 1600 V | 10A | -55°C ~ 175°C | 1.26 V @ 10 A | |
|
JANTX1N6622UDIODE GEN PURP 600V 1.2A A-MELF Microchip Technology |
2,563 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 500 nA @ 600 V | 600 V | 1.2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
|
|
JANTXV1N4249D MET 1A STD 1000V HR Semtech Corporation |
2,586 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1 V | 1 V | 1A (DC) | - | 1.2 V @ 1 A |
|
|
1N6701DIODE SCHOTTKY Microchip Technology |
3,241 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
DSEP40-03AS-TUBPOWER DIODE DISCRETES-FRED TO-26 IXYS |
2,445 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 150V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 40A | -55°C ~ 175°C | 1.46 V @ 40 A | ||
|
|
JAN1N3647D MET 250MA STD 3KV HR Semtech Corporation |
2,501 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/279 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 5V, 1MHz | 2.5 µs | 1 µA @ 3 V | 3 V | 600mA | -65°C ~ 175°C | 5 V @ 250 mA |
|
|
VS-60EPU06L-N3DIODE GP 600V 60A TO247AD-2 Vishay General Semiconductor - Diodes Division |
3,173 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 81 ns | 50 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 1.68 V @ 60 A |
|
|
JAN1N5807D MET 6A SFST 50V Semtech Corporation |
2,362 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
JANTXV1N5614D MET 1A STD 200V HRV Semtech Corporation |
2,288 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
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