Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
UES1302

UES1302

DIODE GEN PURP 100V 6A AXIAL

Microchip Technology
2,310 -

RFQ

UES1302

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 5 µA @ 100 V 100 V 6A -55°C ~ 175°C 925 mV @ 6 A
CD645B

CD645B

SIGNAL/COMPUTER DIODE

Microchip Technology
2,115 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 225 V 270 V 400mA -65°C ~ 175°C -
FR70DR05

FR70DR05

DIODE GEN PURP REV 200V 70A DO5

GeneSiC Semiconductor
3,962 -

RFQ

FR70DR05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 200 V 70A -40°C ~ 125°C 1.4 V @ 70 A
VS-20ETF06-M3

VS-20ETF06-M3

DIODE GEN PURP 600V 20A TO220AC

Vishay General Semiconductor - Diodes Division
3,464 -

RFQ

VS-20ETF06-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 160 ns 100 µA @ 600 V 600 V 20A -40°C ~ 150°C 1.3 V @ 20 A
XBS013P11R-G

XBS013P11R-G

SCHOTTKY BARRIER DIODE

Torex Semiconductor Ltd
2,150 -

RFQ

XBS013P11R-G

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount - - 10 µA @ 10 V 30 V 100mA 125°C 350 mV @ 10 mA
DSA300I100NA

DSA300I100NA

DIODE SCHOTTKY 100V 300A SOT227B

IXYS
3,819 -

RFQ

DSA300I100NA

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Chassis Mount 4.86nF @ 12V, 1MHz - 3 mA @ 100 V 100 V 300A -40°C ~ 150°C 990 mV @ 300 A
SS26S-M3/5AT

SS26S-M3/5AT

DIODE SCHOTTKY 2A 60V DO-214AC

Vishay General Semiconductor - Diodes Division
2,644 -

RFQ

SS26S-M3/5AT

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 60 V 60 V 2A -55°C ~ 150°C 750 mV @ 2 A
LSIC2SD120E40CC

LSIC2SD120E40CC

SCHOTTKY DIODE SIC 1200V 40A

Littelfuse Inc.
3,764 -

RFQ

LSIC2SD120E40CC

Ficha técnica

Tube Gen2 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1142pF @ 1V, 1MHz 0 ns 100 µA @ 1200 V 1200 V 54.5A (DC) -55°C ~ 175°C 1.8 V @ 20 A
SS26S-M3/61T

SS26S-M3/61T

DIODE SCHOTTKY 2A 60V DO-214AC

Vishay General Semiconductor - Diodes Division
2,887 -

RFQ

SS26S-M3/61T

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -65°C ~ 150°C 700 mV @ 2 A
VS-T70HF10

VS-T70HF10

DIODE GEN PURP 100V 70A D-55

Vishay General Semiconductor - Diodes Division
3,145 -

RFQ

VS-T70HF10

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 15 mA @ 100 V 100 V 70A - -
1N4936 BK PBFREE

1N4936 BK PBFREE

DIODE GEN PURP 400V 1A DO41

Central Semiconductor Corp
3,062 -

RFQ

1N4936 BK PBFREE

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 200 ns 5 µA @ 400 V 400 V 1A - 1.2 V @ 1 A
JANTXV1N5622US

JANTXV1N5622US

DIODE GEN PURP 1KV 1A D5A

Microchip Technology
3,434 -

RFQ

JANTXV1N5622US

Ficha técnica

Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 500 nA @ 1000 V 1000 V 1A -65°C ~ 200°C 1.3 V @ 3 A
MBR8045

MBR8045

DIODE SCHOTTKY 45V 80A DO5

GeneSiC Semiconductor
3,877 -

RFQ

MBR8045

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Chassis, Stud Mount - - 1 mA @ 45 V 45 V 80A -55°C ~ 150°C 650 mV @ 80 A
JANTXV1N5619

JANTXV1N5619

D MET 1A FAST 600V HRV

Semtech Corporation
2,777 -

RFQ

JANTXV1N5619

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
1N4937 BK PBFREE

1N4937 BK PBFREE

DIODE GEN PURP 600V 1A DO41

Central Semiconductor Corp
2,197 -

RFQ

1N4937 BK PBFREE

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 200 ns 5 µA @ 600 V 600 V 1A - 1.2 V @ 1 A
JAN1N5552

JAN1N5552

D MET 3A STD 600V

Semtech Corporation
3,585 -

RFQ

JAN1N5552

Ficha técnica

Bulk Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 600 V 600 V 5A - 1 V @ 3 A
CD645

CD645

SIGNAL/COMPUTER DIODE

Microchip Technology
3,595 -

RFQ

CD645

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 20pF @ 4V, 1MHz - 50 nA @ 225 V 270 V 400mA -65°C ~ 175°C 1 V @ 100 mA
VS-150UR100D

VS-150UR100D

DIODE GEN PURP 1KV 150A DO205

Vishay General Semiconductor - Diodes Division
3,356 -

RFQ

VS-150UR100D

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 15 mA @ 1000 V 1000 V 150A -40°C ~ 180°C 1.47 V @ 600 A
FR70GR05

FR70GR05

DIODE GEN PURP REV 400V 70A DO5

GeneSiC Semiconductor
3,219 -

RFQ

FR70GR05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 400 V 70A -40°C ~ 125°C 1.4 V @ 70 A
1N4937 TR PBFREE

1N4937 TR PBFREE

DIODE GEN PURP 600V 1A DO41

Central Semiconductor Corp
2,186 -

RFQ

1N4937 TR PBFREE

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 200 ns 5 µA @ 600 V 600 V 1A - 1.2 V @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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