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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-85HF140MDIODE GEN PURP 1.4KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,793 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
FR70KR05DIODE GEN PURP REV 800V 70A DO5 GeneSiC Semiconductor |
3,942 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 100 V | 800 V | 70A | -40°C ~ 125°C | 1.4 V @ 70 A | |
|
VS-20ETF10-M3DIODE GEN PURP 1KV 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,330 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 95 ns | 100 µA @ 1000 V | 1000 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
|
1N5830DIODE SCHOTTKY 25V 25A DO4 GeneSiC Semiconductor |
3,822 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis, Stud Mount | - | - | 2 mA @ 20 V | 25 V | 25A | -55°C ~ 150°C | 580 mV @ 25 A | |
|
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JANTXV1N5623D MET 1A FAST 1KV HRV Semtech Corporation |
2,122 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
VS-85HF160MDIODE GEN PURP 1.6KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,145 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1600 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
FR70MR05DIODE GEN PURP REV 1KV 70A DO5 GeneSiC Semiconductor |
3,359 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 100 V | 1000 V | 70A | -40°C ~ 125°C | 1.4 V @ 70 A | |
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VS-C4PU6006LHN3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
3,361 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 50 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 1.6 V @ 30 A |
|
|
1N5831DIODE SCHOTTKY 35V 25A DO4 GeneSiC Semiconductor |
2,728 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis, Stud Mount | - | - | 2 mA @ 20 V | 35 V | 25A | -55°C ~ 150°C | 580 mV @ 25 A | |
|
JAN1N5802URSDIODE GEN PURP 50V 1A APKG Microchip Technology |
3,556 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A |
|
|
MUR7005RDIODE GEN PURP REV 50V 70A DO5 GeneSiC Semiconductor |
3,594 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 75 ns | 25 µA @ 50 V | 50 V | 70A | -55°C ~ 150°C | 1 V @ 70 A | |
|
|
VS-85HFR140MDIODE GEN PURP 1.4KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,306 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
LSIC2SD120C05ASIC SCHOTTKY DIODE 1200V 05A TO2 Littelfuse Inc. |
3,745 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
VS-C4PH6006LHN3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
2,806 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 50 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2 V @ 30 A |
|
|
1N6095DIODE SCHOTTKY 30V 25A DO4 GeneSiC Semiconductor |
2,796 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis, Stud Mount | - | - | 2 mA @ 20 V | 30 V | 25A | -55°C ~ 150°C | 580 mV @ 25 A | |
|
|
JAN1N5804URSDIODE GEN PURP 100V 1A APKG Microchip Technology |
3,561 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A |
|
|
MUR7010RDIODE GEN PURP REV 100V 70A DO5 GeneSiC Semiconductor |
3,417 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 75 ns | 25 µA @ 50 V | 100 V | 70A | -55°C ~ 150°C | 1 V @ 70 A | |
|
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VS-85HFR160MDIODE GEN PURP 1.6KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,401 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1600 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
VS-6FL20S02DIODE GEN PURP 200V 6A DO203AA Vishay General Semiconductor - Diodes Division |
3,757 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 50 µA @ 200 V | 200 V | 6A | -65°C ~ 150°C | 1.4 V @ 6 A | |
|
FFSB0665B650V 6A SIC SBD GEN1.5 onsemi |
3,580 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 259pF @ 1V, 100kHz | - | 40 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A |
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