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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BAS316-QZTRANS PREBIAS NPN/PNP Nexperia USA Inc. |
3,785 | - |
RFQ |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 500 nA @ 80 V | 100 V | 250mA (DC) | 150°C | 1.25 V @ 150 mA | |
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MUR105-APDIODE GPP SUPER FAST 1A DO-41 Micro Commercial Co |
2,436 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 20pF @ 4V, 1MHz | 45 ns | - | 50 V | 1A | -50°C ~ 150°C | - | |
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SRAF530HDIODE SCHOTTKY 30V 5A ITO220AC Taiwan Semiconductor Corporation |
2,826 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 5A (DC) | -55°C ~ 125°C | 550 mV @ 5 A | |
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JANKCA1N5284CURRENT REGULATOR Microchip Technology |
2,821 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 264mA | -55°C ~ 175°C | 1 V @ 192 mA | |
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RB520S-309HATE61DIODE SCHOTTKY SMD Rohm Semiconductor |
3,629 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
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RBR2MM30ATFTRDIODE (RECTIFIER FRD) 30V-VR 2A- Rohm Semiconductor |
3,943 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 30 V | 30 V | 2A | 150°C (Max) | 530 mV @ 2 A |
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VS-3EJH01HM3/6ADIODE GEN PURP 100V 3A DO221AC Vishay General Semiconductor - Diodes Division |
2,051 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 18 ns | 2 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 930 mV @ 3 A |
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SE40PGHM3_A/HDIODE GEN PURP 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,425 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 200 V | 200 V | 2.4A | -55°C ~ 175°C | 1.05 V @ 4 A |
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SS34HM3_A/I3A 40V SM SCHOTTKY RECT SMC Vishay General Semiconductor - Diodes Division |
3,975 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A |
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SS1H9-M3/61TDIODE SCHOTTKY 1A 90V DO-214AC Vishay General Semiconductor - Diodes Division |
2,599 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 µA @ 90 V | 90 V | 1A | -65°C ~ 175°C | 860 mV @ 2 A | |
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1N5391GP-E3/54DIODE GEN PURP 50V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,071 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 1.5A | -65°C ~ 175°C | 1.4 V @ 1.5 A |
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RBR2MM60ATFTRDIODE (RECTIFIER FRD) 60V-VR 2A- Rohm Semiconductor |
3,556 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 75 µA @ 60 V | 60 V | 2A | 150°C (Max) | 650 mV @ 2 A |
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SD066SC100A.T2PIV 100V IO 3A CHIP SIZE 66MIL S SMC Diode Solutions |
2,568 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 5V, 1MHz | - | 130 µA @ 100 V | 100 V | 5A | -55°C ~ 200°C | 840 mV @ 5 A | |
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SE40PJHM3_A/HDIODE GEN PURP 600V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,170 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 600 V | 600 V | 2.4A | -55°C ~ 175°C | 1.05 V @ 4 A |
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CMS14(TE12L,Q,M)DIODE SCHOTTKY 60V 2A MFLAT Toshiba Semiconductor and Storage |
3,147 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 2A | -40°C ~ 150°C | 580 mV @ 2 A | |
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ACGRAT104L-HFDIODE GEN PURP 800V 1A 2010 Comchip Technology |
3,224 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
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1N5393GP-E3/54DIODE GEN PURP 200V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
2,680 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 200 V | 200 V | 1.5A | -65°C ~ 175°C | 1.4 V @ 1.5 A |
|
BAS21TMQ-13DIODE GEN PURP 250V 250MA SOT26 Diodes Incorporated |
3,726 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 250 V | 250mA | -65°C ~ 150°C | 1.25 V @ 200 mA |
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MUR320SB M4GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
2,591 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | |
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SS3P3L-M3/86ADIODE SCHOTTKY 30V 3A TO277A Vishay General Semiconductor - Diodes Division |
3,779 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 470 mV @ 3 A |
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