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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR302DIODE SCHOTTKY 3A 20V DO-201AD Taiwan Semiconductor Corporation |
3,121 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 3A (DC) | -55°C ~ 125°C | 550 mV @ 3 A | ||
|
US3KB-HFRECTIFIER ULTRA FAST RECOVERY 80 Comchip Technology |
2,269 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.68 V @ 3 A | |
|
1N5395GP-E3/54DIODE GEN PURP 400V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,982 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1.5A | -65°C ~ 175°C | 1.4 V @ 1.5 A |
|
SK310AHM2GDIODE SCHOTTKY 100V 3A DO214AC Taiwan Semiconductor Corporation |
3,102 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
|
MUR340SB M4GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
3,564 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 25 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A | |
|
SS3P3LHM3_A/HDIODE SCHOTTKY 30V 3A TO277A Vishay General Semiconductor - Diodes Division |
2,512 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 470 mV @ 3 A |
|
|
SARS05DIODE GEN PURP 800V 1A SMD Sanken |
3,871 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 19 µs | 5 µA @ 800 V | 800 V | 1A | -40°C ~ 150°C | 1.05 V @ 1 A | |
|
|
US3BB-HFRECTIFIER ULTRA FAST RECOVERY 10 Comchip Technology |
3,819 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
1N5397GP-E3/54DIODE GEN PURP 600V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,483 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 600 V | 600 V | 1.5A | -65°C ~ 175°C | 1.4 V @ 1.5 A |
|
|
SK33AHM2GDIODE SCHOTTKY 30V 3A DO214AC Taiwan Semiconductor Corporation |
3,956 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 550 mV @ 3 A |
|
|
MUR360SB M4GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
3,332 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A | |
|
SS3H9-M3/9ATDIODE SCHOTTKY 3A 90V DO-214AB Vishay General Semiconductor - Diodes Division |
2,791 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 90 V | 90 V | 3A | -65°C ~ 175°C | 800 mV @ 3 A | |
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|
SJPA-D3VDIODE SCHOTTKY 30V 1A SJP Sanken |
3,959 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 30 V | 30 V | 1A | -40°C ~ 125°C | 360 mV @ 1 A | |
|
|
US3GB-HFRECTIFIER ULTRA FAST RECOVERY 40 Comchip Technology |
3,424 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
1N5398GP-E3/54DIODE GEN PURP 800V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,244 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 800 V | 800 V | 1.5A | -65°C ~ 175°C | 1.4 V @ 1.5 A | |
|
1N5407-APDIODE GPP 3A DO-201AD Micro Commercial Co |
3,679 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | - | - | 800 V | 3A | -55°C ~ 150°C | - | |
|
BAS321-QXTRANS PREBIAS NPN/PNP Nexperia USA Inc. |
3,508 | - |
RFQ |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 150°C | 1.25 V @ 200 mA | |
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MUR1100-APDIODE GPP SUPER FAST 1A DO-41 Micro Commercial Co |
2,504 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 20pF @ 4V, 1MHz | 75 ns | - | 1000 V | 1A | -50°C ~ 150°C | - | |
|
|
SK34AHM2GDIODE SCHOTTKY 40V 3A DO214AC Taiwan Semiconductor Corporation |
3,946 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 550 mV @ 3 A |
|
SRAF550HDIODE SCHOTTKY 50V 5A ITO220AC Taiwan Semiconductor Corporation |
3,997 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 5A (DC) | -55°C ~ 150°C | 700 mV @ 5 A |
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