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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NSR20305NXT5GIC REG LINEAR onsemi |
3,106 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
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R1800-APDIODE GEN PURP 1.8KV 500MA DO41 Micro Commercial Co |
2,678 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | - | - | 1800 V | 500mA | -55°C ~ 150°C | - | |
|
SFA1005GDIODE GEN PURP 300V 10A TO220AC Taiwan Semiconductor Corporation |
2,069 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 10A (DC) | -55°C ~ 150°C | 1.3 V @ 10 A | ||
|
|
SSL34 M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,315 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A (DC) | -55°C ~ 125°C | 410 mV @ 3 A | ||
|
|
JANKCE1N5811RECTIFIER UFR,FRR Microchip Technology |
3,365 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A | |
|
|
BY133-APDIODE GPP 1A DO-41 Micro Commercial Co |
3,881 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | - | 1300 V | 1A | -55°C ~ 150°C | - | |
|
CMR3U-02 BK PBFREEDIODE GEN PURP 200V 3A SMC Central Semiconductor Corp |
3,999 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1 V @ 3 A | |
|
SS3H10-M3/57TDIODE SCHOTTKY 3A 100V DO-214AB Vishay General Semiconductor - Diodes Division |
2,156 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 20 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 800 mV @ 3 A | |
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SJPB-D4VDIODE SCHOTTKY 40V 1A SJP Sanken |
2,785 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 1A | -40°C ~ 150°C | 550 mV @ 1 A | |
|
|
US3MB-HFRECTIFIER ULTRA FAST RECOVERY 10 Comchip Technology |
3,457 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.68 V @ 3 A | |
|
GP15A-E3/54DIODE GEN PURP 50V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
2,931 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 3.5 µs | 5 µA @ 50 V | 50 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1.5 A |
|
SK36AHM2GDIODE SCHOTTKY 60V 3A DO214AC Taiwan Semiconductor Corporation |
2,284 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 720 mV @ 3 A |
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AR1PMHM3/84ADIODE AVALANCHE 1000V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,627 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 120 ns | 1 µA @ 1000 V | 1000 V | 1A | -55°C ~ 175°C | 1.6 V @ 1 A |
|
|
SS3H9-M3/57TDIODE SCHOTTKY 3A 90V DO-214AB Vishay General Semiconductor - Diodes Division |
2,281 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 20 µA @ 90 V | 90 V | 3A | -65°C ~ 175°C | 800 mV @ 3 A | |
|
|
SJPB-D6VDIODE SCHOTTKY 60V 1A SJP Sanken |
3,526 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 1A | -40°C ~ 150°C | 680 mV @ 1 A | |
|
|
US3JB-HFRECTIFIER ULTRA FAST RECOVERY 60 Comchip Technology |
2,788 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.68 V @ 3 A | |
|
|
GP15B-E3/54DIODE GEN PURP 100V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,360 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 3.5 µs | 5 µA @ 100 V | 100 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1.5 A |
|
SS14MHRSGDIODE SCHOTTKY 40V 1A MICRO SMA Taiwan Semiconductor Corporation |
2,436 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 50 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 550 mV @ 1 A | |
|
|
AR1PMHM3/85ADIODE AVALANCHE 1000V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,099 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 120 ns | 1 µA @ 1000 V | 1000 V | 1A | -55°C ~ 175°C | 1.6 V @ 1 A |
|
|
SK520CHDIODE SCHOTTKY 200V 5A DO214AB Taiwan Semiconductor Corporation |
3,189 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 200 V | 200 V | 5A (DC) | -55°C ~ 150°C | 950 mV @ 5 A |
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