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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EM 1VDIODE GEN PURP 400V 1A AXIAL Sanken |
3,781 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 970 mV @ 1 A | |
|
SBYV28-150-E3/73DIODE GEN PURP 150V 3.5A DO201AD Vishay General Semiconductor - Diodes Division |
3,940 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 20 ns | 5 µA @ 150 V | 150 V | 3.5A | -55°C ~ 150°C | 1.1 V @ 3.5 A | |
|
|
HER303GT-GDIODE GEN PURP 200V 3A DO201AA Comchip Technology |
2,355 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
MUR320SHDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,955 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 175°C | 875 mV @ 3 A | |
|
SD0805S040S1R0DIODE SCHOTTKY 0805 KYOCERA AVX |
2,711 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 40 V | 40 V | 1A (DC) | -55°C ~ 125°C | 550 mV @ 1 A | |
|
CMR1-06M BK PBFREEDIODE GEN PURP 600V 1A SMA Central Semiconductor Corp |
3,691 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
B230LA-M3/5ATDIODE SCHOTTKY 30V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,323 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 2A | -65°C ~ 150°C | 500 mV @ 2 A | |
|
|
SBYV28-50-E3/73DIODE GEN PURP 50V 3.5A DO201AD Vishay General Semiconductor - Diodes Division |
2,541 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 20 ns | 5 µA @ 50 V | 50 V | 3.5A | -55°C ~ 150°C | 1.1 V @ 3.5 A | |
|
|
HER304GT-GDIODE GEN PURP 300V 3A DO201AA Comchip Technology |
3,735 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
SS8P2L-M3/87ADIODE SCHOTTKY 20V 8A TO277A Vishay General Semiconductor - Diodes Division |
3,051 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 330pF @ 4V, 1MHz | - | 200 µA @ 30 V | 20 V | 8A | -55°C ~ 150°C | 570 mV @ 8 A |
|
SK320A M2GDIODE SCHOTTKY 200V 3A DO214AC Taiwan Semiconductor Corporation |
2,051 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
NRVTS5100ETFSTAGDIODE SCHOTTKY 8WDFN onsemi |
3,103 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 26.5pF @ 100V, 1MHz | - | 50 µA @ 100 V | 100 V | 5A | -65°C ~ 175°C | 1 V @ 5 A |
|
|
B230LA-M3/61TDIODE SCHOTTKY 30V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,360 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 2A | -65°C ~ 150°C | 500 mV @ 2 A | |
|
|
UG4A-E3/73DIODE GEN PURP 50V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,492 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
|
HER305GT-GDIODE GEN PURP 400V 3A DO201AA Comchip Technology |
3,380 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
SR003HDIODE SCHOTTKY 0.5A 90V DO-41 Taiwan Semiconductor Corporation |
2,603 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 500mA (DC) | -55°C ~ 125°C | 550 mV @ 500 mA | |
|
RL202-APDIODE GEN PURP 50V 2A DO15 Micro Commercial Co |
2,094 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 20pF @ 4V, 1MHz | - | - | 100 V | 2A | -55°C ~ 150°C | - | |
|
|
RS1BHDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
2,659 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
ES3G R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,014 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | ||
|
|
SF11GHDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,095 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 950 mV @ 1 A |
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