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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MUR310S V6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
2,667 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | - | |
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AS1PM-M3/85ADIODE AVALANCHE 1KV 1.5A DO220 Vishay General Semiconductor - Diodes Division |
2,742 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 1000 V | 1000 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
MUR310SHDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
3,710 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 175°C | 875 mV @ 3 A | |
|
SS2FL4-M3/IDIODE SCHOTTKY 40V 2A DO-219AB Vishay General Semiconductor - Diodes Division |
2,324 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 125pF @ 4V, 1MHz | - | 220 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 580 mV @ 2 A |
|
CDBC520-GDIODE SCHOTTKY 20V 5A DO214AB Comchip Technology |
2,488 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 5A | -40°C ~ 125°C | 550 mV @ 5 A | |
|
GL41KHE3/96DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,469 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
MUR315S V6GDIODE GEN PURP 150V 3A DO214AB Taiwan Semiconductor Corporation |
3,881 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | - | |
|
|
AS1PK-M3/84ADIODE AVALANCHE 800V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 800 V | 800 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
|
ES3DVHDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,355 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 10 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
SS1FL3HM3/HDIODE SCHOTTKY 30V 1A DO-219AB Vishay General Semiconductor - Diodes Division |
3,775 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 480 mV @ 1 A |
|
CDBA240L-GDIODE SCHOTTKY 40V 2A DO214AC Comchip Technology |
2,810 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | - | - | 1 mA @ 40 V | 40 V | 2A | 125°C (Max) | 400 mV @ 2 A | ||
|
|
GL41MHE3/96DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,726 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
SRA1050HDIODE SCHOTTKY 50V 10A TO220AC Taiwan Semiconductor Corporation |
2,955 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 10A (DC) | -55°C ~ 150°C | 700 mV @ 10 A | |
|
FR1003-APDIODE GPP FAST 10A R-6 Micro Commercial Co |
2,995 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 150 ns | - | 200 V | 10A | -55°C ~ 150°C | - | |
|
SF21GHDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
2,109 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 2A (DC) | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
RL104-APDIODE GEN PURP 400V 1A A-405 Micro Commercial Co |
3,563 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | - | 400 V | 1A | -55°C ~ 150°C | - | |
|
|
HS3F R7DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,485 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | ||
|
|
MBRF16100DIODE SCHOTTKY 100V 16A ITO220 Taiwan Semiconductor Corporation |
2,736 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 100 V | 100 V | 16A (DC) | -55°C ~ 150°C | 850 mV @ 16 A | ||
|
|
FR1004-APDIODE GPP FAST 10A R-6 Micro Commercial Co |
3,225 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 150 ns | - | 400 V | 10A | -55°C ~ 150°C | - | |
|
UF4003HDIODE GEN PURP 200V 1A DO-41 Taiwan Semiconductor Corporation |
3,916 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A |
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