Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
ESH3B V6G

ESH3B V6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation
3,394 -

RFQ

ESH3B V6G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 20 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C -
HS2M R5G

HS2M R5G

DIODE GEN PURP 1KV 2A DO214AA

Taiwan Semiconductor Corporation
2,928 -

RFQ

HS2M R5G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V 1000 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SJPB-D6

SJPB-D6

DIODE SCHOTTKY 60V 1A SJP

Sanken
2,459 -

RFQ

SJPB-D6

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 60 V 60 V 1A -40°C ~ 150°C 680 mV @ 1 A
CMPD3003 BK PBFREE

CMPD3003 BK PBFREE

DIODE GEN PURP 180V 200MA SOT23

Central Semiconductor Corp
3,510 -

RFQ

CMPD3003 BK PBFREE

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz - 10 nA @ 180 V 180 V 200mA -65°C ~ 150°C 1.1 V @ 200 mA
CDBC2200LR-HF

CDBC2200LR-HF

DIODE SCHOTTKY 200V 2A DO214AB

Comchip Technology
2,172 -

RFQ

CDBC2200LR-HF

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 30pF @ 4V, 1MHz - 500 µA @ 200 V 200 V 2A -50°C ~ 175°C 850 mV @ 2 A
MUR820

MUR820

DIODE GEN PURP 200V 8A TO220AC

Taiwan Semiconductor Corporation
3,245 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 5 µA @ 200 V 200 V 8A (DC) -55°C ~ 175°C 975 mV @ 8 A
SSL34 R7

SSL34 R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
3,482 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 40 V 40 V 3A (DC) -55°C ~ 125°C 410 mV @ 3 A
JAN1N6661/TR

JAN1N6661/TR

STD RECTIFIER

Microchip Technology
3,673 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 50 nA @ 225 V 225 V 500mA -65°C ~ 175°C 1 V @ 400 mA
ER302-AP

ER302-AP

DIODE GEN PURP 200V 3A DO201AD

Micro Commercial Co
3,920 -

RFQ

ER302-AP

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz 35 ns - 200 V 3A -55°C ~ 150°C -
R4000F-AP

R4000F-AP

DIODE GEN PURP 4KV 200MA DO15

Micro Commercial Co
2,579 -

RFQ

R4000F-AP

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 500 ns - 4000 V 200mA -65°C ~ 150°C -
S5D R7

S5D R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
3,137 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 200 V 200 V 5A -55°C ~ 150°C 1.15 V @ 5 A
6A05GH

6A05GH

DIODE GEN PURP 6A 50V R-6

Taiwan Semiconductor Corporation
3,946 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 50 V 50 V 6A (DC) -55°C ~ 150°C 1.1 V @ 6 A
JANS1N5969CUS/TR

JANS1N5969CUS/TR

VOLTAGE REGULATOR

Microchip Technology
2,321 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/356 RoHS - - Active Through Hole - - 1 mA @ 4.74 V - - - 1.5 V @ 1 A
ER303-AP

ER303-AP

DIODE GEN PURP 300V 3A DO201AD

Micro Commercial Co
3,767 -

RFQ

ER303-AP

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz 35 ns - 300 V 3A -55°C ~ 150°C -
MUR190A

MUR190A

DIODE GEN PURP 1A 900V DO-15

Taiwan Semiconductor Corporation
3,870 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 75 ns 5 µA @ 900 V 900 V 1A (DC) -55°C ~ 150°C 1.7 V @ 1 A
R5000-AP

R5000-AP

DIODE GEN PURP 5KV 200MA DO15

Micro Commercial Co
2,049 -

RFQ

R5000-AP

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - - 5000 V 200mA -65°C ~ 150°C -
HS5D R7

HS5D R7

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation
2,637 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
1N4003GH

1N4003GH

DIODE GEN PURP 1A 200V DO-41

Taiwan Semiconductor Corporation
3,035 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A (DC) -55°C ~ 150°C 1 V @ 1 A
JANHCA1N5302

JANHCA1N5302

CURRENT REGULATOR

Microchip Technology
3,266 -

RFQ

JANHCA1N5302

Ficha técnica

Tape & Reel (TR) Military, MIL-PRF-19500/463 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - - 100 V 1.65A -55°C ~ 175°C 1.6 V @ 1.2 A
ER304-AP

ER304-AP

DIODE GEN PURP 400V 3A DO201AD

Micro Commercial Co
3,223 -

RFQ

ER304-AP

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz 35 ns - 400 V 3A -55°C ~ 150°C -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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