Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
UG5J

UG5J

DIODE GEN PURP 5A 600V TO220AC

Taiwan Semiconductor Corporation
2,317 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 30 µA @ 600 V 600 V 5A (DC) -55°C ~ 150°C 3 V @ 5 A
R5000F-AP

R5000F-AP

DIODE GEN PURP 5KV 200MA DO15

Micro Commercial Co
3,916 -

RFQ

R5000F-AP

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 500 ns - 5000 V 200mA -65°C ~ 150°C -
SS34 M6

SS34 M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
2,630 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 40 V 40 V 3A (DC) -55°C ~ 125°C 500 mV @ 3 A
SRAF540H

SRAF540H

DIODE SCHOTTKY 40V 5A ITO220AC

Taiwan Semiconductor Corporation
3,402 -

RFQ

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 5A (DC) -55°C ~ 125°C 550 mV @ 5 A
JANS1N6661/TR

JANS1N6661/TR

STD RECTIFIER

Microchip Technology
3,122 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/587 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 50 nA @ 225 V 225 V 500mA -65°C ~ 175°C 1 V @ 400 mA
ER306-AP

ER306-AP

DIODE GEN PURP 600V 3A DO201AD

Micro Commercial Co
3,401 -

RFQ

ER306-AP

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz 35 ns - 600 V 3A -55°C ~ 150°C -
HERA801G

HERA801G

DIODE GEN PURP 8A 50V TO220AC

Taiwan Semiconductor Corporation
3,640 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 8A (DC) -55°C ~ 150°C 1 V @ 8 A
RL101-AP

RL101-AP

DIODE GEN PURP 50V 1A A-405

Micro Commercial Co
3,995 -

RFQ

RL101-AP

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz - - 50 V 1A -55°C ~ 150°C -
S12KC M6

S12KC M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
3,057 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 800 V 800 V 12A (DC) -55°C ~ 150°C 1.1 V @ 12 A
SR809

SR809

DIODE SCHOTTKY 8A 90V DO-201AD

Taiwan Semiconductor Corporation
3,299 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 8A (DC) -55°C ~ 150°C 920 mV @ 8 A
JAN1N6663/TR

JAN1N6663/TR

STD RECTIFIER

Microchip Technology
3,325 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 50 nA @ 600 V 600 V 500mA -65°C ~ 175°C 1 V @ 400 mA
FR1001-AP

FR1001-AP

DIODE GPP FAST 10A R-6

Micro Commercial Co
2,727 -

RFQ

FR1001-AP

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 150 ns - 50 V 10A -55°C ~ 150°C -
SF11G

SF11G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation
3,662 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 1A (DC) -55°C ~ 150°C 950 mV @ 1 A
RL102-AP

RL102-AP

DIODE GEN PURP 100V 1A A-405

Micro Commercial Co
2,128 -

RFQ

RL102-AP

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz - - 100 V 1A -55°C ~ 150°C -
MUR360S R6

MUR360S R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation
3,655 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 50 ns 10 µA @ 600 V 600 V 3A -55°C ~ 175°C 1.25 V @ 3 A
SFA1001GH

SFA1001GH

DIODE GEN PURP 50V 10A TO220AC

Taiwan Semiconductor Corporation
3,892 -

RFQ

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A (DC) -55°C ~ 150°C 975 mV @ 10 A
JANTXV1N4153UR-1/TR

JANTXV1N4153UR-1/TR

SIGNAL/COMPUTER DIODE

Microchip Technology
2,493 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/337 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 2pF @ 0V, 1MHz 4 ns 50 nA @ 50 V 50 V 150mA -65°C ~ 175°C 880 mV @ 20 mA
FR1002-AP

FR1002-AP

DIODE GPP FAST 10A R-6

Micro Commercial Co
2,791 -

RFQ

FR1002-AP

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 150 ns - 100 V 10A -55°C ~ 150°C -
1N5400G

1N5400G

DIODE GEN PURP 3A 50V DO-201AD

Taiwan Semiconductor Corporation
2,475 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 3A (DC) -55°C ~ 150°C 1.1 V @ 3 A
RL103-AP

RL103-AP

DIODE GEN PURP 200V 1A A-405

Micro Commercial Co
2,004 -

RFQ

RL103-AP

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz - - 200 V 1A -55°C ~ 150°C -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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