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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S4PMHM3_A/HDIODE GEN PURP 1KV 4A TO277A Vishay General Semiconductor - Diodes Division |
2,433 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 1000 V | 1000 V | 4A | -55°C ~ 150°C | 1.1 V @ 4 A |
|
SE80PWD-M3/IDIODE GEN PURP 200V 8A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,100 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 58pF @ 4V, 1MHz | 2.4 µs | 15 µA @ 200 V | 200 V | 8A | -40°C ~ 175°C | 1.12 V @ 8 A |
|
BYT51K-TRDIODE AVALANCHE 800V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,201 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
S5MBHM4GDIODE GEN PURP 5A DO214AA Taiwan Semiconductor Corporation |
3,706 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 10 µA @ 1000 V | - | 5A | -55°C ~ 150°C | 1.1 V @ 5 A |
|
SDURD1520TRDIODE GEN PURP 200V 15A DPAK SMC Diode Solutions |
2,927 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 15A | -55°C ~ 150°C | 1.05 V @ 15 A | |
|
CMOD4448 BK PBFREEDIODE GEN PURP 75V 250MA SOD523 Central Semiconductor Corp |
3,514 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 25 nA @ 20 V | 75 V | 250mA | -65°C ~ 150°C | 1 V @ 100 mA | |
|
|
SS3P6LHM3_A/IDIODE SCHOTTKY 60V 3A TO277A Vishay General Semiconductor - Diodes Division |
2,792 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 50 V | 60 V | 3A | -55°C ~ 150°C | 600 mV @ 3 A |
|
|
SE80PWG-M3/IDIODE GEN PURP 400V 8A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,418 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 58pF @ 4V, 1MHz | 2.4 µs | 15 µA @ 400 V | 400 V | 8A | -40°C ~ 175°C | 1.12 V @ 8 A |
|
6A05GDIODE GEN PURP 6A 50V R-6 Taiwan Semiconductor Corporation |
3,652 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 6A (DC) | -55°C ~ 150°C | 1.1 V @ 6 A | ||
|
|
BYT53C-TRDIODE AVALANCHE 150V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
2,714 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 150 V | 150 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
US1KE-TPDIODE GP ULT FAST 1A DO214AC Micro Commercial Co |
3,368 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 17pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -50°C ~ 150°C | 1.7 V @ 1 A | ||
|
SF34G-TPDIODE GPP HE 3A DO-201AD Micro Commercial Co |
3,316 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | - | 200 V | 3A | -65°C ~ 150°C | - | |
|
SRAF16100DIODE SCHOTTKY 100V 16A ITO220AC Taiwan Semiconductor Corporation |
3,883 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 16A (DC) | -55°C ~ 150°C | 920 mV @ 16 A | ||
|
|
S12GC V6GDIODE GEN PURP 400V 12A DO214AB Taiwan Semiconductor Corporation |
2,440 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 12A | -55°C ~ 150°C | - | |
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|
FR157S-APDIODE GPP FAST 1.5A DO-41 Micro Commercial Co |
3,313 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 20pF @ 4V, 1MHz | 500 ns | - | 1000 V | 1.5A | -55°C ~ 150°C | - | |
|
ES2A-M3/5BTDIODE GEN PURP 50V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,249 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
RBR2MM60CTFTRDIODE (RECTIFIER FRD) 60V-VR 2A- Rohm Semiconductor |
2,917 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 120 µA @ 60 V | 60 V | 2A | 150°C (Max) | 550 mV @ 2 A |
|
S5GHM3/57TDIODE GP 400V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,927 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
SRAF1640DIODE SCHOTTKY 40V 16A ITO220AC Taiwan Semiconductor Corporation |
2,644 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 16A (DC) | -55°C ~ 125°C | 550 mV @ 16 A | ||
|
|
SE80PWJ-M3/IDIODE GEN PURP 600V 8A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,889 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 58pF @ 4V, 1MHz | 2.4 µs | 15 µA @ 600 V | 600 V | 8A | -40°C ~ 175°C | 1.12 V @ 8 A |
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