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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ES2C-M3/5BTDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,282 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
MBRF1660DIODE SCHOTTKY 60V 16A ITO220 Taiwan Semiconductor Corporation |
2,047 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 16A (DC) | -55°C ~ 150°C | 750 mV @ 16 A | ||
|
SK515C V6GDIODE SCHOTTKY 5A 150V DO-214AB Taiwan Semiconductor Corporation |
2,805 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 950 mV @ 5 A | |
|
S3G R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,976 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | ||
|
BYT51A-TAPDIODE AVALANCHE 50V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,181 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 50 V | 50 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
US1CE-TPDIODE GP ULT FAST 1A DO214AC Micro Commercial Co |
3,738 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 10 µA @ 150 V | 150 V | 1A | -50°C ~ 150°C | 1 V @ 1 A | ||
|
SR005HDIODE SCHOTTKY 0.5A 90V DO-41 Taiwan Semiconductor Corporation |
2,764 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 500mA (DC) | -55°C ~ 150°C | 700 mV @ 500 mA | |
|
FR203-APDIODE GPP GAST 2A DO-15 Micro Commercial Co |
2,605 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 150 ns | - | 200 V | 2A | -55°C ~ 150°C | - | |
|
S1G-JR2STANDARD RECOVERY RECTIFIER Taiwan Semiconductor Corporation |
2,731 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | ||
|
|
MBRF1660HDIODE SCHOTTKY 60V 16A ITO220 Taiwan Semiconductor Corporation |
3,843 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 16A (DC) | -55°C ~ 150°C | 750 mV @ 16 A | |
|
|
RS3M R6GDIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,019 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 500 ns | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | ||
|
|
GS1KE-TPS05DIODE GEN PURP 1A DO214AC Micro Commercial Co |
3,568 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 15pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | ||
|
|
BYW35-TRDIODE AVALANCHE 500V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,489 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 500 V | 500 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
HT11GDIODE GEN PURP 1A 50V TS-1 Taiwan Semiconductor Corporation |
2,783 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A | ||
|
SF32G-TPDIODE GPP HE 3A DO-201AD Micro Commercial Co |
3,904 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | - | 100 V | 3A | -65°C ~ 150°C | - | |
|
|
S12MC V6GDIODE GEN PURP 12A DO214AB Taiwan Semiconductor Corporation |
3,050 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 1000 V | - | 12A | -55°C ~ 150°C | - | |
|
|
FR204-APDIODE GPP GAST 2A DO-15 Micro Commercial Co |
3,209 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 150 ns | - | 400 V | 2A | -55°C ~ 150°C | - | |
|
|
ES2D-M3/5BTDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,540 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
|
S1G-JR3STANDARD RECOVERY RECTIFIER Taiwan Semiconductor Corporation |
3,696 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | ||
|
|
SK520C V6GDIODE SCHOTTKY 5A 200V DO-214AB Taiwan Semiconductor Corporation |
2,550 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 950 mV @ 5 A |
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