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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYX86TRDIODE AVALANCHE 1KV 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,991 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 20pF @ 4V, 1MHz | 4 µs | 1 µA @ 1000 V | 1000 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
SF36G-TPDIODE GPP HE 3A DO-201AD Micro Commercial Co |
2,571 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 35 ns | - | 400 V | 3A | -65°C ~ 150°C | - | |
|
|
1N5061TAPDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,880 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 40pF @ 0V, 1MHz | 4 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.15 V @ 2.5 A | |
|
ES2A-M3/52TDIODE GEN PURP 50V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,690 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
SS54C-HFDIODE SCHOTTKY 5A 40V SMC Comchip Technology |
2,810 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 600pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | |
|
|
BYW53-TAPDIODE AVALANCHE 400V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,980 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
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|
SL510-TPDIODE SCHOTTKY 100V 5A DO214AB Micro Commercial Co |
2,468 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 700 mV @ 5 A | |
|
|
SF38G-TPDIODE GPP HE 3A DO-201AD Micro Commercial Co |
3,401 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 35 ns | - | 600 V | 3A | -65°C ~ 150°C | - | |
|
|
BYW52-TAPDIODE AVALANCHE 200V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,601 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
ES2B-M3/52TDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,800 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
|
SS56C-HFDIODE SCHOTTKY 5A 60V SMC Comchip Technology |
2,200 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 4V, 1MHz | - | 1 mA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 700 mV @ 5 A | |
|
|
BYX82TAPDIODE AVALANCHE 200V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,599 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 20pF @ 4V, 1MHz | 4 µs | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
ER5J-TPDIODE GEN PURP 600V 5A DO214AB Micro Commercial Co |
3,393 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 65pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 5A | -50°C ~ 150°C | 1.7 V @ 5 A | |
|
SSA23LHE3_A/IDIODE SCHOTTKY 30V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,171 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 2A | -65°C ~ 150°C | 450 mV @ 2 A |
|
SS12LHR3GDIODE SCHOTTKY 20V 1A SUB SMA Taiwan Semiconductor Corporation |
2,675 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A |
|
|
ES2C-M3/52TDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,861 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
SS33-E3/9ATDIODE SCHOTTKY 30V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,280 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
BYT51A-TRDIODE AVALANCHE 50V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,818 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 50 V | 50 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
V10P8-M3/86ADIODE SCHOTTKY 80V 3.9A TO277A Vishay General Semiconductor - Diodes Division |
3,248 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 800 µA @ 80 V | 80 V | 3.9A | -40°C ~ 150°C | 680 mV @ 10 A |
|
|
VSSA210-E3/5ATDIODE SCHOTTKY 100V 1.7A DO214AC Vishay General Semiconductor - Diodes Division |
3,787 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 175pF @ 4V, 1MHz | - | 150 µA @ 100 V | 100 V | 1.7A | -40°C ~ 150°C | 700 mV @ 2 A |
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