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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HS5B R6GDIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,660 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 5A (DC) | -55°C ~ 150°C | 1 V @ 5 A | ||
|
MUR840DIODE GEN PURP 400V 8A TO220AC Taiwan Semiconductor Corporation |
3,132 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 400 V | 400 V | 8A (DC) | -55°C ~ 175°C | 1.3 V @ 8 A | ||
|
UF1BDIODE GEN PURP 100V 1A DO-41 Taiwan Semiconductor Corporation |
3,679 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A | ||
|
S1J-KR2GSTANDARD RECOVERY RECTIFIER Taiwan Semiconductor Corporation |
2,997 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N4935GHDIODE GEN PURP 200V 1A DO41 Taiwan Semiconductor Corporation |
3,949 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 200 V | 200 V | 1A (DC) | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
S5J R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,756 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
|
|
SFA1007GHDIODE GEN PURP 500V 10A TO220AC Taiwan Semiconductor Corporation |
3,933 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 10A (DC) | -55°C ~ 150°C | 1.7 V @ 10 A | |
|
|
ER1D-TPDIODE 1A 200V HSMB DO214AA Micro Commercial Co |
3,395 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 45pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -50°C ~ 150°C | - | |
|
|
SFAF805GDIODE GEN PURP 8A 400V ITO220AC Taiwan Semiconductor Corporation |
3,178 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 8A (DC) | -55°C ~ 150°C | 1.3 V @ 8 A | ||
|
|
S1J-KR3GSTANDARD RECOVERY RECTIFIER Taiwan Semiconductor Corporation |
3,703 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N4934GHDIODE GEN PURP 100V 1A DO41 Taiwan Semiconductor Corporation |
2,982 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
SS36 M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,799 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A (DC) | -55°C ~ 150°C | 750 mV @ 3 A | ||
|
1N5391GHDIODE GEN PURP 1.5A 50V DO-15 Taiwan Semiconductor Corporation |
2,049 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1.5A (DC) | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
|
|
ER1G-TPDIODE 1A 400V HSMB DO214AA Micro Commercial Co |
2,850 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 45pF @ 4V, 1MHz | 75 ns | 5 µA @ 400 V | 400 V | 1A | -50°C ~ 150°C | - | |
|
|
HERA804GDIODE GEN PURP 8A 300V TO220AC Taiwan Semiconductor Corporation |
2,101 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 8A (DC) | -55°C ~ 150°C | 1 V @ 8 A | ||
|
|
1N4003GA01A,200V,STD.GLASS PASSIVATED REC Taiwan Semiconductor Corporation |
3,957 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
1N5401GHDIODE GEN PURP 3A 100V DO-201AD Taiwan Semiconductor Corporation |
3,483 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
SS315 M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,541 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | ||
|
|
FR303GDIODE FAST REC 3A 200V DO-201AD Taiwan Semiconductor Corporation |
3,257 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | ||
|
|
ER1J-TPDIODE 1A 600V HSMB DO214AA Micro Commercial Co |
3,662 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 45pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -50°C ~ 150°C | - |
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