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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CRS15I40A(TE85L,QMDIODE SCHOTTKY 40V 1.5A S-FLAT Toshiba Semiconductor and Storage |
2,442 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 35pF @ 10V, 1MHz | - | 60 µA @ 40 V | 40 V | 1.5A | 150°C (Max) | 550 mV @ 1.5 A | |
|
|
MUR420GP-TPDIODE GEN PURP 200V 4A DO201AD Micro Commercial Co |
2,187 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 60 ns | 10 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 1.35 V @ 4 A | |
|
V8P15-M3/HDIODE SCHOTTKY 150V 8A TO277A Vishay General Semiconductor - Diodes Division |
3,606 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 150 V | 150 V | 8A | -40°C ~ 150°C | 1.08 V @ 8 A |
|
SSC53L-M3/9ATDIODE SCHOTTKY 5A 30V DO-214AB Vishay General Semiconductor - Diodes Division |
3,470 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 700 µA @ 30 V | 30 V | 5A | -65°C ~ 150°C | 450 mV @ 5 A | |
|
1N6482HE3/96DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,533 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
HER304G R0GDIODE GEN PURP 300V 3A DO201AD Taiwan Semiconductor Corporation |
2,252 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
NSVR0340P2T5GDIODE SCHOTTKY 40V 250MA SOD923 onsemi |
3,665 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 6pF @ 10V, 1MHz | 5 ns | 6 µA @ 40 V | 40 V | 250mA (DC) | -55°C ~ 150°C | 590 mV @ 200 mA | |
|
|
SJPD-D5DIODE GEN PURP 500V 1A SJP Sanken |
3,565 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 10 µA @ 500 V | 500 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |
|
|
V8P15-M3/IDIODE SCHOTTKY 150V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,833 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 150 V | 150 V | 8A | -40°C ~ 150°C | 1.08 V @ 8 A |
|
|
SSC53L-M3/57TDIODE SCHOTTKY 5A 30V DO-214AB Vishay General Semiconductor - Diodes Division |
3,469 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 700 µA @ 30 V | 30 V | 5A | -65°C ~ 150°C | 450 mV @ 5 A | |
|
|
1N6483HE3/96DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,847 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
HER305G R0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
3,827 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
NSVR0530P2T5GDIODE SCHOTTKY 30V 500MA SOD923 onsemi |
144,966 | - |
RFQ |
Tape & Reel (TR),Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | - | 200 µA @ 30 V | 30 V | 500mA (DC) | -55°C ~ 125°C | 620 mV @ 500 mA | |
|
|
MUR405GP-TPDIODE GEN PURP 50V 4A DO201AD Micro Commercial Co |
2,593 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 45 ns | 10 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 1 V @ 4 A | |
|
|
V8PM10-M3/HDIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
3,483 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 60 µA @ 100 V | 100 V | 8A | -40°C ~ 150°C | 750 mV @ 8 A |
|
|
SD090SB45B.T2PIV 45V IO 7.5A CHIP SIZE 90MIL SMC Diode Solutions |
3,639 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 200 µA @ 45 V | 45 V | 7.5A | -55°C ~ 175°C | 640 mV @ 7.5 A | |
|
|
1N6484HE3/96DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,744 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
MBRF2090HDIODE SCHOTTKY 90V 20A ITO220 Taiwan Semiconductor Corporation |
3,170 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 20A (DC) | -55°C ~ 150°C | 950 mV @ 20 A | |
|
|
1N4004GA01A,400V,STD.GLASS PASSIVATED REC Taiwan Semiconductor Corporation |
2,248 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
UF1ADIODE GEN PURP 50V 1A DO-41 Taiwan Semiconductor Corporation |
3,732 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A |
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