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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
EGF1THE3/5CA DIODE GEN PURP 1.3KV 1A DO214BA Vishay General Semiconductor - Diodes Division	2,422	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, Superectifier®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	75 ns	5 µA @ 1300 V	1300 V	1A	-55°C ~ 150°C	3 V @ 1 A
SRA1040 DIODE SCHOTTKY 40V 10A TO220AC Taiwan Semiconductor Corporation	3,718	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	10A (DC)	-55°C ~ 125°C	550 mV @ 10 A
SBAT54CWT1G-M02 SBAT54CW - SCHOTTKY BARRIER DIOD Rochester Electronics, LLC	3,325	-	RFQ	Ficha técnica	Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
UGA15120H DIODE GEN PURP 15A TO220AC Taiwan Semiconductor Corporation	3,470	-	RFQ		Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	65 ns	5 µA @ 1200 V	1200 V	15A (DC)	-55°C ~ 175°C	2.9 V @ 15 A
S10JC R7 DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation	3,375	-	RFQ		Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	-	1 µA @ 600 V	600 V	10A (DC)	-55°C ~ 150°C	1.1 V @ 10 A
IDD15E60BUMA1 DIODE GEN PURP 600V TO252-3 Infineon Technologies	2,466	-	RFQ		Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	87 ns	50 µA @ 600 V	600 V	29.2A (DC)	-40°C ~ 175°C	2 V @ 15 A
EGF1THE3/67A DIODE GEN PURP 1.3KV 1A DO214BA Vishay General Semiconductor - Diodes Division	2,205	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, Superectifier®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	75 ns	5 µA @ 1300 V	1300 V	1A	-55°C ~ 150°C	3 V @ 1 A
6A60GH A0G DIODE GEN PURP 6A 600V R-6 Taiwan Semiconductor Corporation	3,625	-	RFQ		Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	-	10 µA @ 600 V	600 V	6A (DC)	-55°C ~ 150°C	1 V @ 6 A
MBRF5200 DIODE SCHOTTKY 200V 5A ITO220AC Taiwan Semiconductor Corporation	3,513	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	5A (DC)	-55°C ~ 150°C	1.02 V @ 5 A
BYT51M-TAP DIODE AVALANCHE 1KV 1.5A SOD57 Vishay General Semiconductor - Diodes Division	3,913	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	4 µs	1 µA @ 1000 V	1000 V	1.5A	-55°C ~ 175°C	1.1 V @ 1 A
SS54F-HF DIODE SCHOTTKY 5A 40V SMAF Comchip Technology	2,090	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	500pF @ 4V, 1MHz	-	1 mA @ 40 V	40 V	5A	-55°C ~ 150°C	550 mV @ 5 A
RH 1ZV DIODE GEN PURP 200V 600MA AXIAL Sanken	2,712	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 µs	5 µA @ 200 V	200 V	600mA	-40°C ~ 150°C	1.3 V @ 600 mA
AS1PG-M3/85A DIODE AVALANCHE 400V 1.5A DO220 Vishay General Semiconductor - Diodes Division	3,289	-	RFQ	Ficha técnica	Tape & Reel (TR)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	10.4pF @ 4V, 1MHz	1.5 µs	5 µA @ 400 V	400 V	1.5A (DC)	-55°C ~ 175°C	1.15 V @ 1.5 A
EGP10C DIODE GEN PURP 150V 1A DO204AL onsemi	2,310	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT),Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	5 µA @ 150 V	150 V	1A	-65°C ~ 150°C	950 mV @ 1 A
BYT52K-TAP DIODE AVALANCHE 800V 1.4A SOD57 Vishay General Semiconductor - Diodes Division	3,681	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	200 ns	5 µA @ 800 V	800 V	1.4A	-55°C ~ 175°C	1.3 V @ 1 A
NA03HSA08 DIODE SCHOTTKY 80V 3A DO-221BC KYOCERA AVX	3,476	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 80 V	80 V	3A	-40°C ~ 150°C	700 mV @ 3 A
RK 16V DIODE SCHOTTKY 60V 2A AXIAL Sanken	2,339	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 60 V	60 V	2A	-40°C ~ 150°C	690 mV @ 2 A
AS1PJ-M3/85A DIODE AVALANCHE 600V 1.5A DO220 Vishay General Semiconductor - Diodes Division	3,266	-	RFQ	Ficha técnica	Tape & Reel (TR)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	10.4pF @ 4V, 1MHz	1.5 µs	5 µA @ 600 V	600 V	1.5A (DC)	-55°C ~ 175°C	1.15 V @ 1.5 A
EGP10F DIODE GEN PURP 300V 1A DO41 onsemi	3,311	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	5 µA @ 300 V	300 V	1A	-65°C ~ 150°C	1.25 V @ 1 A
BYT53D-TAP DIODE AVALANCHE 200V 1.9A SOD57 Vishay General Semiconductor - Diodes Division	2,759	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	50 ns	5 µA @ 200 V	200 V	1.9A	-55°C ~ 175°C	1.1 V @ 1 A