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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RJU60C2DPD-00#J2DIODE GEN PURP 600V TO252 Renesas Electronics America Inc |
2,426 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
EGP10GE-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,437 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |
|
BYM11-400HE3/97DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,363 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
AP01CWKDIODE GEN PURP 1KV 200MA AXIAL Sanken |
3,796 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 200 ns | 100 µA @ 1000 V | 1000 V | 200mA | -40°C ~ 150°C | 4 V @ 200 mA | |
|
BYT52K-TRDIODE AVALANCHE 800V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
3,891 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 800 V | 800 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
CD214B-B220RDIO SBD VRRM 20V 2A SMB Bourns Inc. |
2,067 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 115pF @ 4V, 1MHz | - | 200 µA @ 20 V | 20 V | 2A | -55°C ~ 125°C | 500 mV @ 2 A | |
|
SF42GHDIODE GEN PURP 100V 4A DO201AD Taiwan Semiconductor Corporation |
3,907 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 4A (DC) | -55°C ~ 150°C | 1 V @ 4 A | |
|
|
SF61GHDIODE GEN PURP 50V 6A DO201AD Taiwan Semiconductor Corporation |
3,226 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 6A (DC) | -55°C ~ 150°C | 975 mV @ 6 A | |
|
PMEG2005EGWXNEXPERIA PMEG2005EG - RECTIFIER Rochester Electronics, LLC |
2,406 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 66pF @ 1V, 1MHz | - | 200 µA @ 20 V | 20 V | 500mA | 150°C (Max) | 390 mV @ 500 mA |
|
|
MUR305S R7DIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,352 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | 875 mV @ 3 A | ||
|
|
RJU60C2TDPP-AJ#T2DIODE GEN PURP 600V TO220FP Renesas Electronics America Inc |
2,543 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
GF1AHE3/67ADIODE GEN PURP 50V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,660 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 2 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
1T1GDIODE GEN PURP 1A 50V TS-1 Taiwan Semiconductor Corporation |
2,668 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1.1 V @ 1 A | ||
|
|
SR305DIODE SCHOTTKY 3A 50V DO-201AD Taiwan Semiconductor Corporation |
2,363 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 700 mV @ 3 A | ||
|
BAS321JFBAS321J - HIGH-VOLTAGE SWITCHING Rochester Electronics, LLC |
3,810 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 250 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA |
|
|
RJU60C6TDPP-AJ#T2DIODE GEN PURP 600V TO220FP Renesas Electronics America Inc |
3,960 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GF1GHE3/67ADIODE GEN PURP 400V 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,369 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
SRA10100DIODE SCHOTTKY 100V 10A TO220AC Taiwan Semiconductor Corporation |
3,965 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A (DC) | -55°C ~ 150°C | 850 mV @ 10 A | ||
|
|
FR151GHDIODE FAST REC 1.5A 50V DO-15 Taiwan Semiconductor Corporation |
2,719 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A (DC) | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
PMEG6010ER/S501XPMEG6010ER - 1 A LOW VF MEGA SCH Rochester Electronics, LLC |
3,698 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
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