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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYM11-50HE3/97DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,107 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
AP01CWSDIODE GEN PURP 1KV 200MA AXIAL Sanken |
3,549 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 200 ns | 100 µA @ 1000 V | 1000 V | 200mA | -40°C ~ 150°C | 4 V @ 200 mA | |
|
BYT53D-TRDIODE AVALANCHE 200V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
2,426 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 200 V | 200 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
CD214B-B240RDIO SBD VRRM 40V 2A SMB Bourns Inc. |
3,480 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 115pF @ 4V, 1MHz | - | 200 µA @ 40 V | 40 V | 2A | -55°C ~ 125°C | 500 mV @ 2 A | |
|
EP01CV1DIODE GEN PURP 1KV 200MA AXIAL Sanken |
2,125 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 200 ns | 5 µA @ 1000 V | 1000 V | 200mA | -40°C ~ 150°C | 4 V @ 200 mA | |
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|
SJPL-L2VDIODE GEN PURP 200V 3A SJP Sanken |
2,185 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 50 µA @ 200 V | 200 V | 3A | -40°C ~ 150°C | 980 mV @ 3 A | |
|
|
BYM11-600HE3/97DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,550 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
EL 1V0DIODE GEN PURP 400V 1.5A AXIAL Sanken |
2,195 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 1.5A | -40°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
BYT54K-TRDIODE AVALANCHE 800V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
3,325 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 800 V | 800 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
CD214A-FS1KDIO RECT Bourns Inc. |
2,038 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 2.2 V @ 1 A | |
|
SF38GHR0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
2,218 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A |
|
|
SJPX-H3VDIODE GEN PURP 300V 2A SJP Sanken |
2,974 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 50 µA @ 300 V | 300 V | 2A | -40°C ~ 150°C | 1.3 V @ 2 A | |
|
|
RGL41AHE3/97DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,217 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
EM 1BV0DIODE GEN PURP 800V 1A AXIAL Sanken |
2,161 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 20 µA @ 800 V | 800 V | 1A | -40°C ~ 150°C | 1.05 V @ 1 A | |
|
|
BYV16-TRDIODE AVALANCHE 1KV 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,154 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
UG2DHR0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,290 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
SB550-E3/73DIODE SCHOTTKY 50V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,986 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 5A | -65°C ~ 150°C | 650 mV @ 5 A | |
|
|
SJPB-L4VLDIODE SCHOTTKY 40V 3A SJP Sanken |
2,060 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 40 V | 40 V | 3A | -40°C ~ 150°C | 550 mV @ 3 A | |
|
|
RGL41BHE3/97DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,343 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
EM 1CV0DIODE GEN PURP 1KV 1A AXIAL Sanken |
2,534 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 20 µA @ 1000 V | 1000 V | 1A | -40°C ~ 150°C | 1.05 V @ 1 A |
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