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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GS1AE-TPDIODE GEN PURP 50V 1A DO214AC Micro Commercial Co |
3,913 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | - | |
|
SF37GDIODE GEN PURP 3A 500V DO-201AD Taiwan Semiconductor Corporation |
2,700 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 3A (DC) | -55°C ~ 150°C | 1.7 V @ 3 A | ||
|
|
1N5407GH A0GDIODE GEN PURP 3A 800V DO-201AD Taiwan Semiconductor Corporation |
3,757 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 3A (DC) | -55°C ~ 150°C | 1 V @ 3 A | |
|
FSV15150VFSV15150 - 15 A, 150 V ULTRA-LOW Rochester Electronics, LLC |
2,688 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 150 V | 150 V | 15A | -55°C ~ 150°C | 850 mV @ 15 A | |
|
RGL41GHE3/97DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,779 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
RM 2BVDIODE GEN PURP 800V 1.2A AXIAL Sanken |
3,172 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 800 V | 800 V | 1.2A | -40°C ~ 150°C | 910 mV @ 1.5 A | |
|
|
BYM10-200HE3/97DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,522 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
SF4001-TRDIODE AVAL 1A 50V SOD-57 Vishay General Semiconductor - Diodes Division |
2,094 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 76pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
SS35HE3_B/IDIODE SCHOTTKY 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,903 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A |
|
|
SJPA-L3DIODE SCHOTTKY 30V 3A SJP Sanken |
3,234 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 4.5 mA @ 30 V | 30 V | 3A | -40°C ~ 125°C | 360 mV @ 3 A | |
|
|
RGL41JHE3/97DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,461 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
RM 2CVDIODE GEN PURP 1KV 1.2A AXIAL Sanken |
2,605 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 1000 V | 1000 V | 1.2A | -40°C ~ 150°C | 910 mV @ 1.5 A | |
|
|
BYM10-400HE3/97DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,640 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
ES3DHE3J_A/IDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,383 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
|
|
SS36HE3_B/HDIODE SCHOTTKY 60V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,998 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A |
|
|
SJPB-L4DIODE SCHOTTKY 40V 3A SJP Sanken |
3,842 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 40 V | 40 V | 3A | -40°C ~ 150°C | 550 mV @ 3 A | |
|
HS3DB M4GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
2,214 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
RO 2CVDIODE GEN PURP 1KV 1.2A AXIAL Sanken |
3,546 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 1000 V | 1000 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.5 A | |
|
|
BYM10-50HE3/97DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,089 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
V10PM45HM3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
2,804 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1850pF @ 4V, 1MHz | - | 300 µA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 600 mV @ 10 A |
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