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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SS36HE3_B/IDIODE SCHOTTKY 60V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,753 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A |
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SJPD-L5DIODE GEN PURP 500V 3A SJP Sanken |
3,352 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 15 µA @ 500 V | 500 V | 3A | -40°C ~ 150°C | 1.4 V @ 3 A | |
|
HS3FB M4GDIODE GEN PURP 300V 3A DO214AA Taiwan Semiconductor Corporation |
2,502 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
RU 1CVDIODE GEN PURP 1KV 200MA AXIAL Sanken |
2,453 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 1000 V | 1000 V | 200mA | -40°C ~ 150°C | 3 V @ 250 mA | |
|
BYM10-600HE3/97DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,758 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
SS35DIODE SCHOTTKY 3A 50V DO-214AB Taiwan Semiconductor Corporation |
2,433 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 750 mV @ 3 A | ||
|
ES1CL RVGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,571 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
SJPJ-L3DIODE SCHOTTKY 30V 3A SJP Sanken |
3,892 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 30 V | 30 V | 3A | -40°C ~ 150°C | 450 mV @ 3 A | |
|
|
HS3GB M4GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
2,159 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
RU 2BVDIODE GEN PURP 800V 1A AXIAL Sanken |
3,121 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 800 V | 800 V | 1A | -40°C ~ 150°C | 1.5 V @ 1 A | |
|
|
BYM10-800HE3/97DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,126 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
SSL32 V6GDIODE SCHOTTKY 3A 20V DO-214AB Taiwan Semiconductor Corporation |
2,266 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | - | |
|
|
ES1DL RUGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,954 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
SJPL-H6DIODE GEN PURP 600V 2A SJP Sanken |
2,972 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 50 µA @ 600 V | 600 V | 2A | -40°C ~ 150°C | 1.5 V @ 2 A | |
|
|
HS3JB M4GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
2,999 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
RU 2CVDIODE GEN PURP 1KV 800MA AXIAL Sanken |
2,080 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 1000 V | 1000 V | 800mA | -40°C ~ 150°C | 1.5 V @ 1 A | |
|
|
SIGC156T60NR2CYX1SA1DIODE GEN PURPOSE 600V Infineon Technologies |
2,166 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
GS1BE-TPDIODE GEN PURP 100V 1A DO214AC Micro Commercial Co |
2,768 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | - | |
|
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SS35-1HE3_A/IDIODE SCHOTTKY 50V 3A SMD Vishay General Semiconductor - Diodes Division |
3,342 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | |
|
F1T1GHDIODE FAST REC 1A 50V TS-1 Taiwan Semiconductor Corporation |
2,406 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A |
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