Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
UF3006-G

UF3006-G

DIODE GEN PURP 600V 3A DO201AA

Comchip Technology
2,149 -

RFQ

UF3006-G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 3A -55°C ~ 125°C 1.7 V @ 3 A
HER601GP-TP

HER601GP-TP

DIODE GPP HE 6A R-6

Micro Commercial Co
3,105 -

RFQ

HER601GP-TP

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 50 ns - 50 V 6A -55°C ~ 150°C -
HS5M V6G

HS5M V6G

DIODE GEN PURP 5A DO214AB

Taiwan Semiconductor Corporation
3,077 -

RFQ

HS5M V6G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 1000 V - 5A -55°C ~ 150°C -
AG01AV0

AG01AV0

DIODE GEN PURP 600V 500MA AXIAL

Sanken
2,069 -

RFQ

AG01AV0

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 100 µA @ 600 V 600 V 500mA -40°C ~ 150°C 1.8 V @ 600 mA
V10PM6HM3/I

V10PM6HM3/I

RECTIFIER BARRIER SCHOTTKY TO-27

Vishay General Semiconductor - Diodes Division
3,114 -

RFQ

V10PM6HM3/I

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1650pF @ 4V, 1MHz - 800 µA @ 60 V 60 V 10A -40°C ~ 175°C 640 mV @ 10 A
SB320-E3/73

SB320-E3/73

DIODE SCHOTTKY 20V 3A DO201AD

Vishay General Semiconductor - Diodes Division
3,363 -

RFQ

SB320-E3/73

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 3A -65°C ~ 150°C 490 mV @ 3 A
UF3006-HF

UF3006-HF

DIODE GEN PURP 600V 3A DO201AA

Comchip Technology
3,475 -

RFQ

UF3006-HF

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 3A -55°C ~ 125°C 1.7 V @ 3 A
HER602GP-TP

HER602GP-TP

DIODE GPP HE 6A R-6

Micro Commercial Co
3,287 -

RFQ

HER602GP-TP

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 50 ns - 100 V 6A -55°C ~ 150°C -
MBR1060STR

MBR1060STR

DIODE SCHOTTKY 60V 10A TO277B

SMC Diode Solutions
2,008 -

RFQ

MBR1060STR

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 850pF @ 5V, 1MHz - 1 mA @ 60 V 60 V 10A -55°C ~ 150°C 630 mV @ 10 A
AG01AWK

AG01AWK

DIODE GEN PURP 600V 500MA AXIAL

Sanken
2,180 -

RFQ

AG01AWK

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 100 µA @ 600 V 600 V 500mA -40°C ~ 150°C 1.8 V @ 600 mA
1N4384 TR TIN/LEAD

1N4384 TR TIN/LEAD

DIODE GEN PURP 400V 1A DO-41

Central Semiconductor Corp
2,876 -

RFQ

1N4384 TR TIN/LEAD

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Last Time Buy Through Hole - 10 µs 10 µA @ 400 V 400 V 1A -65°C ~ 200°C 1.1 V @ 1 A
1N5820-E3/73

1N5820-E3/73

DIODE SCHOTTKY 20V 3A DO201AD

Vishay General Semiconductor - Diodes Division
3,838 -

RFQ

1N5820-E3/73

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 2 mA @ 20 V 20 V 3A -65°C ~ 125°C 475 mV @ 3 A
UF3007-G

UF3007-G

DIODE GEN PURP 800V 3A DO201AA

Comchip Technology
2,563 -

RFQ

UF3007-G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 3A -55°C ~ 125°C 1.7 V @ 3 A
HER603GP-TP

HER603GP-TP

DIODE GPP HE 6A R-6

Micro Commercial Co
3,301 -

RFQ

HER603GP-TP

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 50 ns - 200 V 6A -55°C ~ 150°C -
1N4006-E3/73

1N4006-E3/73

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,503 -

RFQ

1N4006-E3/73

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.1 V @ 1 A
FM803P

FM803P

DIODE GP GLASS 8A 200V DO277

Rectron USA
2,199 -

RFQ

FM803P

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 5 µA @ 200 V 200 V 8A 150°C 1.1 V @ 8 A
BAT54LP-7-79

BAT54LP-7-79

DIODE SCHOTTKY 30V 200MA 2DFN

Diodes Incorporated
2,357 -

RFQ

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Obsolete Surface Mount 10pF @ 1V, 1MHz 5 ns 2 µA @ 25 V 30 V 200mA (DC) -65°C ~ 125°C 1 V @ 100 mA
1N5419 BK

1N5419 BK

TRANSISTOR

Central Semiconductor Corp
3,188 -

RFQ

1N5419 BK

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 250 ns 1 µA @ 500 V 500 V 3A -65°C ~ 200°C 1.1 V @ 3 A
RB521S-30SPTE61

RB521S-30SPTE61

DIODE SCHOTTKY SMD

Rohm Semiconductor
2,869 -

RFQ

RB521S-30SPTE61

Ficha técnica

Tape & Reel (TR) RoHS - - Obsolete - - - - - - - -
B5817WHE3-TP

B5817WHE3-TP

SCHOTTKY BARRIER RECTIFIERS 20V

Micro Commercial Co
2,781 -

RFQ

B5817WHE3-TP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 120pF @ 4V, 1MHz - 200 µA @ 20 V 20 V 1A -65°C ~ 125°C 450 mV @ 1 A
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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