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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RL201DIODE GEN PURP 1000V 2A DO-15 Rectron USA |
2,658 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
SBYV27-50-E3/73DIODE GEN PURP 50V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,451 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 15 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.07 V @ 3 A | |
|
V15P45HM3_A/HDIODE SCHOTTKY 45V 15A TO277A Vishay General Semiconductor - Diodes Division |
2,304 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 45 V | 45 V | 15A (DC) | -40°C ~ 150°C | 580 mV @ 15 A |
|
RM 10AVDIODE GEN PURP 600V 1.2A AXIAL Sanken |
2,168 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 910 mV @ 1.5 A | |
|
|
SJPB-H9DIODE SCHOTTKY 90V 2A SJP Sanken |
3,928 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 90 V | 90 V | 2A | -40°C ~ 150°C | 850 mV @ 2 A | |
|
|
ES01FDIODE GEN PURP 1.5KV 500MA AXIAL Sanken |
3,135 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 1500 V | 1500 V | 500mA | -40°C ~ 150°C | 2 V @ 500 mA | |
|
S5A-E3/9ATDIODE GEN PURP 50V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,890 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
UG2A-E3/73DIODE GEN PURP 50V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,048 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
V12P45HM3_A/IDIODE SCHOTTKY 45V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,568 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 45 V | 45 V | 12A | -40°C ~ 150°C | 580 mV @ 12 A |
|
|
RM 11BVDIODE GEN PURP 800V 1.2A AXIAL Sanken |
2,697 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 800 V | 800 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.5 A | |
.JPG)
|
SJPL-D2DIODE GEN PURP 200V 1A SJP Sanken |
3,779 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 25 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 980 mV @ 1 A | |
|
|
RF 1AV1DIODE GEN PURP 600V 600MA AXIAL Sanken |
2,804 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 600 V | 600 V | 600mA | -40°C ~ 150°C | 2 V @ 600 mA | |
|
|
S5B-E3/9ATDIODE GEN PURP 100V 5A DO214AB Vishay General Semiconductor - Diodes Division |
2,683 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
UG2B-E3/73DIODE GEN PURP 100V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,005 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
V12P6HM3_A/HDIODE SCHOTTKY 60V 12A TO277A Vishay General Semiconductor - Diodes Division |
2,974 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2.9 mA @ 60 V | 60 V | 12A | -40°C ~ 150°C | 610 mV @ 12 A |
|
|
RM 11CVDIODE GEN PURP 1KV 1.2A AXIAL Sanken |
3,854 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 1000 V | 1000 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.5 A | |
|
SB360-TDIODE SCHOTTKY 60V 3A DO201AD Diodes Incorporated |
2,350 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 3A | -65°C ~ 150°C | 740 mV @ 3 A | |
|
|
RH 1CV1DIODE GEN PURP 1KV 600MA AXIAL Sanken |
2,189 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 5 µA @ 1000 V | 1000 V | 600mA | -40°C ~ 150°C | 1.3 V @ 600 mA | |
|
|
S5G-E3/9ATDIODE GEN PURP 400V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,892 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
UG2C-E3/73DIODE GEN PURP 150V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,894 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
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