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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BA159GP-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,788 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
ES01FWDIODE GEN PURP 1.5KV 500MA AXIAL Sanken |
2,195 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 1500 V | 1500 V | 500mA | -40°C ~ 150°C | 2 V @ 500 mA | |
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|
SJPE-H3VDIODE SCHOTTKY 30V 2A SJP Sanken |
2,609 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 2A | -40°C ~ 150°C | 550 mV @ 2 A | |
|
|
AU02DIODE GEN PURP 400V 800MA AXIAL Sanken |
2,459 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 800mA | -40°C ~ 150°C | 1.3 V @ 800 mA | |
|
1N5822 R0GDIODE SCHOTTKY 40V 3A DO201AD Taiwan Semiconductor Corporation |
2,471 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 525 mV @ 3 A | |
|
RGF1KDIODE GEN PURP 800V 1A SMA onsemi |
2,975 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
1N4007GPE-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,465 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
RF 1AVDIODE GEN PURP 600V 600MA AXIAL Sanken |
2,400 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 600 V | 600 V | 600mA | -40°C ~ 150°C | 2 V @ 600 mA | |
|
|
SJPL-D2VDIODE GEN PURP 200V 1A SJP Sanken |
3,604 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 25 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 980 mV @ 1 A | |
|
|
AU02ADIODE GEN PURP 600V 800MA AXIAL Sanken |
2,821 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 600 V | 600 V | 800mA | -40°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
SS56BF-HFDIODE SCHOTTKY 5A 60V SMBF Comchip Technology |
3,293 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 4V, 1MHz | - | 1 mA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 700 mV @ 5 A | |
|
SBYV27-100-E3/73DIODE GEN PURP 100V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,003 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 15 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.07 V @ 3 A | |
|
|
GP10T-E3/73DIODE GEN PURP 1.3KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,133 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1300 V | 1300 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
|
|
RF 1BVDIODE GEN PURP 800V 600MA AXIAL Sanken |
2,657 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 800 V | 800 V | 600mA | -40°C ~ 150°C | 2 V @ 1 A | |
|
|
SJPB-H4DIODE SCHOTTKY 40V 2A SJP Sanken |
2,888 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 2A | -40°C ~ 150°C | 550 mV @ 2 A | |
|
|
AU02ZDIODE GEN PURP 200V 800MA AXIAL Sanken |
2,468 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 200 V | 200 V | 800mA | -40°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
SS54BF-HFDIODE SCHOTTKY 5A 40V SMBF Comchip Technology |
3,675 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 800pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | |
|
|
SBYV27-150-E3/73DIODE GEN PURP 150V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,971 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 15 ns | 5 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 1.07 V @ 3 A | |
|
|
GP10M-E3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,831 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
RH 1CVDIODE GEN PURP 1KV 600MA AXIAL Sanken |
2,240 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 5 µA @ 1000 V | 1000 V | 600mA | -40°C ~ 150°C | 1.3 V @ 600 mA |
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