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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MUR320S R6GDIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,470 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 875 mV @ 3 A | ||
|
|
HS5A R6GDIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,108 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 5A (DC) | -55°C ~ 150°C | 1 V @ 5 A | ||
|
|
SK54C R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,130 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | ||
|
|
MUR315S M6DIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
3,326 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 875 mV @ 3 A | ||
|
P300B-E3/54DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,802 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 100 V | 100 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
SR1040HC0GDIODE SCHOTTKY 40V 10A TO220AB Taiwan Semiconductor Corporation |
3,734 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 10A | -55°C ~ 125°C | 550 mV @ 5 A |
|
|
UPS180E3/TR13DIODE SCHOTTKY 1A 80V POWERMITE Microchip Technology |
2,263 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
VSSB410S-E3/5BTDIODE SCHOTTKY 100V 1.9A DO214AA Vishay General Semiconductor - Diodes Division |
2,115 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 230pF @ 4V, 1MHz | - | 1.5 µA @ 70 V | 100 V | 1.9A | -40°C ~ 150°C | 770 mV @ 4 A |
|
NRVTS10120MFST3GDIODE SCHOTTKY 120V 10A 5DFN onsemi |
3,787 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 120 V | 120 V | 10A | -55°C ~ 175°C | 820 mV @ 10 A |
|
|
RU 2MV1DIODE GEN PURP 400V 1.1A AXIAL Sanken |
2,588 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 1.1A | -40°C ~ 150°C | 1.2 V @ 1.1 A | |
|
|
GI510-E3/54DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,579 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 3A | -50°C ~ 150°C | 1.1 V @ 9.4 A | |
|
|
RFN10NS4STLFAST RECOVERY DIODE : ROHM'S FAS Rohm Semiconductor |
2,130 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 430 V | 430 V | 10A | 150°C | 1.55 V @ 10 A | ||
|
|
UPS190E3/TR13DIODE SCHOTTKY 1A 90V POWERMITE Microchip Technology |
3,914 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
ES2AHM3/5BTDIODE GEN PURP 50V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,181 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
|
ES3J R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,240 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | ||
|
|
ES3DV R6GDIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,222 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | ||
|
|
S5A M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,389 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
|
|
SK83C M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,280 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 8A (DC) | -55°C ~ 125°C | 550 mV @ 8 A | ||
|
|
SK515C M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,233 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 950 mV @ 5 A | ||
|
|
NRVTS10120MFST1GDIODE SCHOTTKY 120V 10A 5DFN onsemi |
2,163 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 120 V | 120 V | 10A | -55°C ~ 175°C | 820 mV @ 10 A |
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