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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4947GP-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,887 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
SK82C M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,480 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 8A (DC) | -55°C ~ 125°C | 550 mV @ 8 A | ||
|
|
NA03HA20DIODE SCHOTTKY 200V 3A DO-221BC KYOCERA AVX |
4,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 200 V | 200 V | 3A | -40°C ~ 150°C | 900 mV @ 3 A | |
|
|
S8KC R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,751 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A (DC) | -55°C ~ 150°C | 985 mV @ 8 A | ||
|
|
S3G R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,317 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | ||
|
|
SK85C R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,333 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 8A (DC) | -55°C ~ 150°C | 750 mV @ 8 A | ||
|
|
SS32 M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,715 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A (DC) | -55°C ~ 125°C | 500 mV @ 3 A | ||
|
|
RS3G R7DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,572 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 150 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | ||
|
RBR3MM60ATRDIODE SCHOTTKY 60V 3A PMDU Rohm Semiconductor |
2,299 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 3A | 150°C (Max) | 660 mV @ 3 A | |
|
|
RG 10VDIODE GEN PURP 400V 1.2A AXIAL Sanken |
2,337 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 500 µA @ 400 V | 400 V | 1.2A | -40°C ~ 150°C | 1.8 V @ 1.5 A | |
|
DB2440500LDIODE SCHOTTKY 40V 3A TMINIP2 Panasonic Electronic Components |
3,051 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 57pF @ 10V, 1MHz | 18 ns | 2.4 mA @ 40 V | 40 V | 3A (DC) | 150°C (Max) | 440 mV @ 3 A | ||
|
CURC306-GDIODE GEN PURP 800V 3A DO214AB Comchip Technology |
3,688 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 800 V | 800 V | 3A | 150°C (Max) | 1.7 V @ 3 A | |
|
NRVTS1060PFST3GDIODE SCHOTTKY 60V 10A TO277-3 onsemi |
3,428 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1023pf @ 1V, 1MHz | - | 350 µA @ 60 V | 60 V | 10A | -55°C ~ 175°C | 660 mV @ 10 A | |
|
|
NA05HSA08DIODE SCHOTTKY 80V 5A DO-221BC KYOCERA AVX |
2,076 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 80 V | 80 V | 5A | -40°C ~ 150°C | 700 mV @ 5 A | |
|
SBR835LT4G-VF01DIODE SCHOTTKY 35V 8A DPAK onsemi |
2,500 | - |
RFQ |
Tape & Reel (TR),Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.4 mA @ 35 V | 35 V | 8A | -65°C ~ 150°C | 510 mV @ 8 A | |
|
|
RG 1CVDIODE GEN PURP 1KV 700MA AXIAL Sanken |
2,096 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 20 µA @ 1000 V | 1000 V | 700mA | -40°C ~ 150°C | 3.3 V @ 700 mA | |
|
SSB43LHE3_A/IDIODE SCHOTTKY 30V 4A DO214AA Vishay General Semiconductor - Diodes Division |
2,250 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 4A | -65°C ~ 150°C | 490 mV @ 4 A |
|
NTS1045MFST3GDIODE SCHOTTKY 45V 10A 5DFN onsemi |
2,965 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 120 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 570 mV @ 10 A | |
|
CDBA2200LR-HFDIODE SCHOTTKY 200V 2A DO214AC Comchip Technology |
2,076 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 30pF @ 4V, 1MHz | - | 500 µA @ 200 V | 200 V | 2A | -50°C ~ 175°C | 850 mV @ 2 A | |
|
|
EGP10G-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,483 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |
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