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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS33 R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,935 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A (DC) | -55°C ~ 125°C | 500 mV @ 3 A | ||
|
|
HS3M R6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,008 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | ||
|
|
S4G M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,235 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
|
|
SS320 M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,151 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | ||
|
|
HS5B R6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,051 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 5A (DC) | -55°C ~ 150°C | 1 V @ 5 A | ||
|
|
SK82C R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,803 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 8A (DC) | -55°C ~ 125°C | 550 mV @ 8 A | ||
|
|
RS3J R6GDIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,859 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 250 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | ||
|
|
MUR420S R6DIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,888 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 65pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 175°C | 875 mV @ 4 A | ||
|
|
S3K R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,862 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | ||
|
|
S12GC R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,647 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 12A (DC) | -55°C ~ 150°C | 1.1 V @ 12 A | ||
|
BY329-1200,127DIODE GEN PURP 1.2KV 8A TO220AC NXP USA Inc. |
3,648 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 135 ns | 1 mA @ 1000 V | 1200 V | 8A | 150°C (Max) | 1.85 V @ 20 A | |
|
|
S8KC R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,300 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A (DC) | -55°C ~ 150°C | 985 mV @ 8 A | ||
|
BY329X-1500,127DIODE GEN PURP 1.5KV 6A TO220F NXP USA Inc. |
3,556 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 230 ns | - | 1500 V | 6A (DC) | 150°C (Max) | 1.45 V @ 6.5 A | |
|
|
SS32 R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,880 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A (DC) | -55°C ~ 125°C | 500 mV @ 3 A | ||
|
|
BY359X-1500,127DIODE GEN PURP 1.5KV 10A TO220F NXP USA Inc. |
2,732 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 600 ns | 100 µA @ 1300 V | 1500 V | 10A (DC) | 150°C (Max) | 1.8 V @ 20 A | |
|
|
S4J R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,022 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
|
|
BY459-1500,127DIODE GEN PURP 1.5KV 12A TO220AC NXP USA Inc. |
3,911 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 350 ns | - | 1500 V | 12A (DC) | 150°C (Max) | 1.3 V @ 6.5 A | |
|
|
ES3J M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,489 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | ||
|
|
BY459X-1500S,127DIODE GEN PURP 1.5KV 10A TO220F NXP USA Inc. |
3,715 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 220 ns | 250 µA @ 1300 V | 1500 V | 10A (DC) | 150°C (Max) | 1.35 V @ 6.5 A | |
|
|
S5M M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,105 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | 1000 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A |
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