Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
C2D05120E

C2D05120E

DIODE SCHOTTKY 1.2KV 17.5A TO252

Wolfspeed, Inc.
3,379 -

RFQ

C2D05120E

Ficha técnica

Tube Zero Recovery™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 455pF @ 0V, 1MHz 0 ns 200 µA @ 1200 V 1200 V 17.5A (DC) -55°C ~ 175°C 1.8 V @ 5 A
RS3B R6G

RS3B R6G

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation
2,582 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 1.3 V @ 3 A
C3D10170H

C3D10170H

DIODE SCHOTTKY 1.7KV 14.4A TO247

Wolfspeed, Inc.
2,771 -

RFQ

C3D10170H

Ficha técnica

Tube Z-Rec® RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 827pF @ 0V, 1MHz 0 ns 60 µA @ 1700 V 1700 V 14.4A (DC) -55°C ~ 175°C 2 V @ 10 A
S4G R6

S4G R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
2,112 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 400 V 400 V 4A -55°C ~ 150°C 1.15 V @ 4 A
NUR460/L01,112

NUR460/L01,112

DIODE GEN PURP 600V 4A DO201AD

NXP USA Inc.
2,244 -

RFQ

NUR460/L01,112

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 65 ns 50 µA @ 600 V 600 V 4A 150°C (Max) 1.28 V @ 4 A
SK510C R6G

SK510C R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
2,885 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 300 µA @ 100 V 100 V 5A -55°C ~ 150°C 850 mV @ 5 A
NUR460/L02,112

NUR460/L02,112

DIODE GEN PURP 600V 4A DO201AD

Rochester Electronics, LLC
3,695 -

RFQ

NUR460/L02,112

Ficha técnica

Tube,Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 65 ns 50 µA @ 600 V 600 V 4A 150°C (Max) 1.28 V @ 4 A
S12GC M6

S12GC M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
3,817 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 12A (DC) -55°C ~ 150°C 1.1 V @ 12 A
NUR460/L04,112

NUR460/L04,112

DIODE GEN PURP 600V 4A DO201AD

NXP USA Inc.
2,003 -

RFQ

NUR460/L04,112

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 65 ns 50 µA @ 600 V 600 V 4A 150°C (Max) 1.28 V @ 4 A
SS35 R7

SS35 R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
2,563 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 50 V 50 V 3A (DC) -55°C ~ 150°C 750 mV @ 3 A
BYC8B-600PQP

BYC8B-600PQP

DIODE GEN PURP 600V 8A

NXP USA Inc.
2,806 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 18 ns 20 µA @ 600 V 600 V 8A 175°C (Max) 3.4 V @ 8 A
NS8DT-E3/45

NS8DT-E3/45

DIODE GEN PURP 200V 8A TO220AC

Vishay General Semiconductor - Diodes Division
2,925 -

RFQ

NS8DT-E3/45

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 1.1 V @ 8 A
ER5ETR

ER5ETR

DIODE GEN PURP 300V 5A SMC

SMC Diode Solutions
2,811 -

RFQ

ER5ETR

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 58pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 5A -55°C ~ 150°C 1.25 V @ 5 A
ES3C-13-F

ES3C-13-F

DIODE GEN PURP 150V 3A SMC

Diodes Incorporated
3,283 -

RFQ

ES3C-13-F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 25 ns 10 µA @ 150 V 150 V 3A -55°C ~ 150°C 900 mV @ 3 A
60S8-TP

60S8-TP

DIODE GEN PURP 800V 6A DO201AD

Micro Commercial Co
3,981 -

RFQ

60S8-TP

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 800 V 800 V 6A -55°C ~ 150°C 1 V @ 6 A
BY203-16STAP

BY203-16STAP

DIODE AVALANCH 1.2KV 250MA SOD57

Vishay General Semiconductor - Diodes Division
2,055 -

RFQ

BY203-16STAP

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 300 ns 2 µA @ 1000 V 1200 V 250mA (DC) -55°C ~ 150°C 2.4 V @ 200 mA
S10AL-TP

S10AL-TP

DIODE GEN PURP 50V 10A DO214AB

Micro Commercial Co
2,333 -

RFQ

S10AL-TP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - - 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 1.2 V @ 10 A
NS8JT-E3/45

NS8JT-E3/45

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor - Diodes Division
3,500 -

RFQ

NS8JT-E3/45

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 600 V 600 V 8A -55°C ~ 150°C 1.1 V @ 8 A
ER5JTR

ER5JTR

DIODE GEN PURP 600V 5A SMC

SMC Diode Solutions
2,501 -

RFQ

ER5JTR

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 58pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 5A -55°C ~ 150°C 1.7 V @ 5 A
NTS1545MFST3G

NTS1545MFST3G

DIODE SCHOTTKY 45V 15A 5DFN

onsemi
2,004 -

RFQ

NTS1545MFST3G

Ficha técnica

Tape & Reel (TR),Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 120 µA @ 45 V 45 V 15A -55°C ~ 150°C 570 mV @ 15 A
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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