Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N5285-1

1N5285-1

CURRENT REGULATOR DIODE

Microchip Technology
2,831 -

RFQ

1N5285-1

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
FR154G R0G

FR154G R0G

DIODE GEN PURP 400V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,879 -

RFQ

FR154G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
NSR01F30NXT5G

NSR01F30NXT5G

DIODE SCHOTTKY 30V 100MA 2DSN

onsemi
3,839 -

RFQ

NSR01F30NXT5G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 7pF @ 5V, 1MHz - 50 µA @ 30 V 30 V 100mA (DC) 125°C (Max) 500 mV @ 100 mA
FR155G R0G

FR155G R0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,558 -

RFQ

FR155G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
VS-85HF10M

VS-85HF10M

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,325 -

RFQ

VS-85HF10M

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 400 V 85A -65°C ~ 180°C 1.2 V @ 267 A
UES1003SM

UES1003SM

RECTIFIER

Microchip Technology
3,132 -

RFQ

Bulk RoHS - - Active - - - - - - - -
JAN1N5622

JAN1N5622

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology
2,684 -

RFQ

JAN1N5622

Ficha técnica

Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 1000 V 1000 V 1A -65°C ~ 200°C 1.3 V @ 3 A
JAN1N5621

JAN1N5621

D MET 1A FAST 800V

Semtech Corporation
2,026 -

RFQ

JAN1N5621

Ficha técnica

Bulk Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 18pF @ 5V, 1MHz 300 ns 500 nA @ 800 V 800 V 2A -65°C ~ 175°C 1.2 V @ 1 A
1N5289-1

1N5289-1

CURRENT REGULATOR DIODE

Microchip Technology
2,078 -

RFQ

1N5289-1

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
VS-85HF120M

VS-85HF120M

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,314 -

RFQ

VS-85HF120M

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 400 V 85A -65°C ~ 180°C 1.2 V @ 267 A
UES1301

UES1301

RECTIFIER

Microchip Technology
3,333 -

RFQ

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns - 50 V 6A -55°C ~ 175°C 925 mV @ 6 A
FFSB10120A-F085

FFSB10120A-F085

1200V 10A AUTO SIC SBD

onsemi
3,723 -

RFQ

FFSB10120A-F085

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 612pF @ 1V, 100kHz 0 ns 200 µA @ 1200 V 1200 V 21A (DC) -55°C ~ 175°C 1.75 V @ 10 A
JAN1N5622

JAN1N5622

D MET 1A STD 1KV

Semtech Corporation
2,616 -

RFQ

JAN1N5622

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
1N5291-1

1N5291-1

CURRENT REGULATOR DIODE

Microchip Technology
3,909 -

RFQ

1N5291-1

Ficha técnica

Bulk RoHS - - Active Through Hole - - - - - - -
VS-85HF20M

VS-85HF20M

DIODE GEN PURP 200V 85A DO203AB

Vishay General Semiconductor - Diodes Division
3,700 -

RFQ

VS-85HF20M

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 200 V 85A -65°C ~ 180°C 1.2 V @ 267 A
JANTX1N5802URS

JANTX1N5802URS

DIODE GEN PURP 50V 1A APKG

Microchip Technology
2,773 -

RFQ

JANTX1N5802URS

Ficha técnica

Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 10V, 1MHz 25 ns 1 µA @ 50 V 50 V 1A -65°C ~ 175°C 875 mV @ 1 A
JANTX1N5620/TR

JANTX1N5620/TR

STD RECTIFIER

Microchip Technology
2,763 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 800 V 800 V 1A -65°C ~ 200°C 1.3 V @ 3 A
JAN1N5623

JAN1N5623

D MET 1A FAST 1KV HR

Semtech Corporation
3,495 -

RFQ

JAN1N5623

Ficha técnica

Bulk Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 18pF @ 5V, 1MHz 500 ns 500 nA @ 1 V 1 V 2A -65°C ~ 175°C 1.2 V @ 1 A
1N5297-1

1N5297-1

CURRENT REGULATOR DIODE

Microchip Technology
3,187 -

RFQ

1N5297-1

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
VS-85HF40M

VS-85HF40M

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division
3,451 -

RFQ

VS-85HF40M

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 400 V 85A -65°C ~ 180°C 1.2 V @ 267 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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