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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5550DIODE GEN PURP 200V 5A AXIAL Semtech Corporation |
3,485 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 92pF @ 5V, 1MHz | 2 µs | 1 µA @ 200 V | 200 V | 5A | - | 1 V @ 3 A | |
|
|
SB260S_R2_00001SCHOTTKY BARRIER RECTIFIERS Panjit International Inc. |
2,309 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 2A | -50°C ~ 125°C | 700 mV @ 2 A | ||
|
RS1ADIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
3,417 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A | ||
|
|
1N5298-1CURRENT REGULATOR DIODE Microchip Technology |
3,087 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
SS13L_R1_00001LOW VF SURFACE MOUNT SCHOTTKY RE Panjit International Inc. |
2,158 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 420 mV @ 1 A | ||
|
ES1DVHM2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,538 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 15 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
|
VS-85HF80MDIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,982 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
PG4937_R2_00001GLASS PASSIVATED JUNCTION FAST R Panjit International Inc. |
2,215 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 12pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | ||
|
|
VS-50PF40WDIODE GEN PURP 400V 50A DO203AB Vishay General Semiconductor - Diodes Division |
3,646 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 400 V | 50A | -55°C ~ 180°C | 1.4 V @ 125 A | |
|
SDM2A40CSP-7BSCHOTTKY RECTIFIER X3-WLB1608-2 Diodes Incorporated |
3,461 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 81pF @ 5V, 1MHz | 14 ns | 100 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 470 mV @ 1 A | ||
|
|
S1JF_R1_00001SURFACE MOUNT SUPER FAST RECOVER Panjit International Inc. |
2,661 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | ||
|
|
SK310A M2GDIODE SCHOTTKY 100V 3A DO214AC Taiwan Semiconductor Corporation |
2,923 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
|
JANTX1N5806URSDIODE GEN PURP 150V 1A APKG Microchip Technology |
3,283 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A |
|
DHG60I600HADIODE GEN PURP 600V 60A TO247 IXYS |
3,479 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 600 V | 60A | -55°C ~ 150°C | - | ||
|
|
1N5551DIODE GEN PURP 400V 5A AXIAL Semtech Corporation |
3,545 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 92pF @ 5V, 1MHz | 2 µs | 1 µA @ 400 V | 400 V | 5A | - | 1 V @ 3 A | |
|
|
1N5305-1CURRENT REGULATOR DIODE Microchip Technology |
3,287 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
VS-85HFR10MDIODE GEN PURP 100V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,799 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 100 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
CDLL1A80DIODE SCHOTTKY 80V 1A DO213AB Microchip Technology |
3,136 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 80 V | 80 V | 1A | - | 690 mV @ 1 A | |
|
|
UES1302E3RECTIFIER UFR,FRR Microchip Technology |
2,281 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 5 µA @ 100 V | 100 V | 6A | 175°C | 925 mV @ 6 A | ||
|
JAN1N5550DIODE GEN PURP 200V 3A AXIAL Microchip Technology |
3,999 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A |
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