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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ACDBCT360-HFDIODE SCHOTTKY 60V 3A 3220 Comchip Technology |
2,492 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Last Time Buy | Surface Mount | 180pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 700 mV @ 3 A |
|
VT3045BP-M3/4WDIODE SCHOTTKY 45V 30A TO220AC Vishay General Semiconductor - Diodes Division |
2,122 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 2 mA @ 45 V | 45 V | 30A (DC) | 200°C (Max) | 700 mV @ 30 A |
|
SDURD1560TRDIODE GEN PURP 600V DPAK SMC Diode Solutions |
2,465 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 600 V | 600 V | - | -55°C ~ 150°C | 1.7 V @ 15 A | |
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RF1005TF6SC9ROHM'S FAST RECOVERY DIODES ARE Rohm Semiconductor |
3,640 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 10 µA @ 600 V | 600 V | 10A | 150°C | 1.7 V @ 10 A | |
|
TSPB20U80SDIODE SCHOTTKY 80V 20A SMPC4.0 Taiwan Semiconductor Corporation |
1,500 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 300 µA @ 80 V | 80 V | 20A | -55°C ~ 150°C | 640 mV @ 20 A | |
|
UPS835LE3/TR13DIODE SCHOTTKY 35V 8A POWERMITE3 Microchip Technology |
5,572 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.4 mA @ 35 V | 35 V | 8A | -55°C ~ 125°C | 510 mV @ 8 A | |
|
|
RF1501TF3SFHC9ROHM'S FAST RECOVERY DIODES ARE Rohm Semiconductor |
1,109 | - |
RFQ |
Ficha técnica |
Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 10 µA @ 300 V | 300 V | 20A | 150°C (Max) | 1.5 V @ 20 A |
|
PU4DCH25NS, 4A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
2,999 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | 25 ns | 2 µA @ 200 V | 200 V | 4A (DC) | -55°C ~ 175°C | 930 mV @ 4 A | |
|
SDUR1560WDIODE GEN PURP 600V TO247AC SMC Diode Solutions |
2,678 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | - | -55°C ~ 175°C | 1.7 V @ 15 A | |
|
ES3DHE3_A/IDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
1,998 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
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STPSC8H065BY-TRAUTOMOTIVE 650 V POWER SCHOTTKY STMicroelectronics |
5,014 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 414pF @ 0V, 1MHz | 0 ns | 80 µA @ 650 V | 650 V | 8A | -40°C ~ 175°C | - |
|
TSUP5M60SH S1G5A, 60V, SCHOTTKY RECTIFIER Taiwan Semiconductor Corporation |
3,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 346pF @ 4V, 1MHz | - | 200 µA @ 60 V | 60 V | 5A (DC) | -55°C ~ 175°C | 640 mV @ 5 A |
|
|
VS-ETH3007THN3DIODE GEN PURP 650V 30A TO220AC Vishay General Semiconductor - Diodes Division |
1,755 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 37 ns | 30 µA @ 650 V | 650 V | 30A | -55°C ~ 175°C | 2.1 V @ 30 A |
|
|
TSUP5M45SH S1G5A, 45V, SCHOTTKY RECTIFIER Taiwan Semiconductor Corporation |
3,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 589pF @ 4V, 1MHz | - | 150 µA @ 45 V | 45 V | 5A (DC) | -55°C ~ 175°C | 600 mV @ 5 A |
|
VS-HFA04SD60S-M3DIODE GEN PURP 600V 4A TO252AA Vishay General Semiconductor - Diodes Division |
3,441 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | - | Standard | Active | Surface Mount | - | - | 3 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.8 V @ 4 A |
|
BYT54M-TAPDIODE AVALANCHE 1KV 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
1,375 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 1000 V | 1000 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
VT4045BP-M3/4WDIODE SCHOTTKY 45V 40A TO220AC Vishay General Semiconductor - Diodes Division |
1,427 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 3 mA @ 45 V | 45 V | 40A (DC) | 200°C (Max) | 670 mV @ 40 A |
|
|
BYT52M-TAPDIODE AVALANCHE 1KV 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
4,098 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 1000 V | 1000 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
VFT4045BP-M3/4WDIODE SCHOTTKY 45V 40A ITO220AC Vishay General Semiconductor - Diodes Division |
1,090 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 3 mA @ 45 V | 45 V | 40A (DC) | 200°C (Max) | 670 mV @ 40 A |
|
|
BYT52M-TRDIODE AVALANCHE 1KV 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
3,401 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 1000 V | 1000 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A |
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