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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
C3D04065A DIODE SCHOTTKY 650V 4A TO220-2 Wolfspeed, Inc.	3,549	-	RFQ	Ficha técnica	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Not For New Designs	Through Hole	251pF @ 0V, 1MHz	0 ns	60 µA @ 650 V	650 V	13.5A (DC)	-55°C ~ 175°C	1.8 V @ 4 A
PMEG100T100ELPEZ DIODE SCHOTTKY 100V 10A CFP15B Nexperia USA Inc.	3,906	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	850pF @ 1V, 1MHz	22 ns	5 µA @ 100 V	100 V	10A	175°C	810 mV @ 10 A
SCS310AMC SHORTER RECOVERY TIME, ENABLING Rohm Semiconductor	435	-	RFQ	Ficha técnica	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	500pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	10A (DC)	175°C (Max)	1.5 V @ 10 A
V10P6-M3/86A DIODE SCHOTTKY 60V 4.3A TO277A Vishay General Semiconductor - Diodes Division	1,321	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	1.9 mA @ 60 V	60 V	4.3A	-40°C ~ 150°C	590 mV @ 10 A
STPSC8065D DIODE SCHOTTKY 650V 8A TO220AC STMicroelectronics	3,232	-	RFQ	Ficha técnica	Tube	ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	540pF @ 0V, 1MHz	0 ns	105 µA @ 650 V	650 V	8A	-40°C ~ 175°C	1.45 V @ 8 A
RHRG5060 DIODE GEN PURP 600V 50A TO247-2 onsemi	2,554	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	250 µA @ 600 V	600 V	50A	-65°C ~ 175°C	2.1 V @ 50 A
MURF860 DIODE GEN PURP 600V 8A ITO220AC SMC Diode Solutions	17,731	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	50 ns	5 µA @ 600 V	600 V	8A	-55°C ~ 150°C	2.2 V @ 8 A
STPSC10065D DIODE SCHOTTKY 650V 10A TO220AC STMicroelectronics	965	-	RFQ	Ficha técnica	Tube	ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	670pF @ 0V, 1MHz	0 ns	130 µA @ 650 V	650 V	10A	-40°C ~ 175°C	1.45 V @ 10 A
ST2080STR DIODE SCHOTTKY 80V TO277B SMC Diode Solutions	2,038	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	300 µA @ 80 V	80 V	-	-55°C ~ 150°C	700 mV @ 20 A
STTH30L06W DIODE GEN PURP 600V 30A DO247 STMicroelectronics	600	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	90 ns	25 µA @ 600 V	600 V	30A	175°C (Max)	1.55 V @ 30 A
1N5416 BK TIN/LEAD RECTIFIER-FAST RECOVERY < Central Semiconductor Corp	1,990	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	175pF @ 12V, 1MHz	150 ns	1 µA @ 100 V	100 V	3A	-65°C ~ 200°C	1.1 V @ 3 A
SCS312AHGC9 SHORTER RECOVERY TIME, ENABLING Rohm Semiconductor	680	-	RFQ	Ficha técnica	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	600pF @ 1V, 1MHz	0 ns	60 µA @ 650 V	650 V	12A (DC)	175°C (Max)	-
S3J V7G DIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation	1,696	-	RFQ	Ficha técnica	Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 600 V	600 V	3A	-55°C ~ 150°C	1.15 V @ 3 A
STPSC10H065DY DIODE SCHOTTKY 650V 10A TO220AC STMicroelectronics	173	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101, ECOPACK®2	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Silicon Carbide Schottky	Active	Through Hole	480pF @ 0V, 1MHz	-	100 µA @ 650 V	650 V	10A	-40°C ~ 175°C	1.75 V @ 10 A
S3D V7G DIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation	1,667	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 200 V	200 V	3A	-55°C ~ 150°C	1.15 V @ 3 A
VS-8EWF04S-M3 DIODE GEN PURP 400V 8A TO252AA Vishay General Semiconductor - Diodes Division	1,982	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	55 ns	100 µA @ 400 V	400 V	8A	-40°C ~ 150°C	1.2 V @ 8 A
S3M V7G DIODE GEN PURP 1KV 3A DO214AB Taiwan Semiconductor Corporation	1,655	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 1000 V	1000 V	3A	-55°C ~ 150°C	1.15 V @ 3 A
STTH30L06WY DIODE GEN PURP 600V 30A DO247 STMicroelectronics	267	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	90 ns	25 µA @ 600 V	600 V	30A	-40°C ~ 175°C	1.55 V @ 30 A
SE12DJ-M3/I DIODE GEN PURP 600V 3.2A TO263AC Vishay General Semiconductor - Diodes Division	1,145	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	90pF @ 4V, 1MHz	3 µs	20 µA @ 600 V	600 V	3.2A	-55°C ~ 175°C	1.15 V @ 12 A
C6D06065A 6A 650V G6 ZREC SIC SCHOTTKY DIO Wolfspeed, Inc.	399	-	RFQ	Ficha técnica	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	394pF @ 0V, 1MHz	0 ns	30 µA @ 650 V	650 V	24A (DC)	-55°C ~ 175°C	1.5 V @ 6 A