Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BY880-1400

BY880-1400

DIODE STD D5.4X7.5 1400V 8A

Diotec Semiconductor
1,250 -

RFQ

BY880-1400

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 5 µA @ 1400 V 1400 V 8A -50°C ~ 175°C 1.1 V @ 8 A
BYV79E-200,127

BYV79E-200,127

DIODE GEN PURP 200V 14A TO220AC

WeEn Semiconductors
949 -

RFQ

BYV79E-200,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 50 µA @ 200 V 200 V 14A 150°C (Max) 1.05 V @ 14 A
1N5624

1N5624

RECTIFIER DIODE

Rochester Electronics, LLC
16,629 -

RFQ

1N5624

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 3A -65°C ~ 175°C 1 V @ 3 A
STPS1045D

STPS1045D

DIODE SCHOTTKY 45V 10A TO220AC

STMicroelectronics
267 -

RFQ

STPS1045D

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 45 V 45 V 10A 175°C (Max) 600 mV @ 10 A
BYC5-600P127

BYC5-600P127

HYPERFAST RECTIFIER DIODE TO 22

Rochester Electronics, LLC
4,000 -

RFQ

BYC5-600P127

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
APT30DQ60BG

APT30DQ60BG

DIODE GEN PURP 600V 30A TO247

Microchip Technology
256 -

RFQ

APT30DQ60BG

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 25 µA @ 600 V 600 V 30A -55°C ~ 175°C 2.4 V @ 30 A
GE1003

GE1003

RECTIFIER DIODE, 1A, 150V

Rochester Electronics, LLC
1,808 -

RFQ

GE1003

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 4V, 1MHz 35 ns 2 µA @ 150 V 150 V 1A -65°C ~ 175°C 950 mV @ 1 A
VS-HFA06TB120S-M3

VS-HFA06TB120S-M3

DIODE GEN PURP 1.2KV 6A D2PAK

Vishay General Semiconductor - Diodes Division
384 -

RFQ

VS-HFA06TB120S-M3

Ficha técnica

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 80 ns 5 µA @ 1200 V 1200 V 6A (DC) -55°C ~ 150°C 3.9 V @ 12 A
SK56L_R1_00001

SK56L_R1_00001

SMC, SKY

Panjit International Inc.
2,194 -

RFQ

SK56L_R1_00001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 5A -55°C ~ 150°C 500 mV @ 5 A
MBR1660-E3/45

MBR1660-E3/45

DIODE SCHOTTKY 60V 16A TO220AB

Vishay General Semiconductor - Diodes Division
292 -

RFQ

MBR1660-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 60 V 60 V 16A -65°C ~ 150°C 750 mV @ 16 A
2CL75

2CL75

HV DIODE D2.5X12 16000V 0.005A

Diotec Semiconductor
5,000 -

RFQ

2CL75

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - 80 ns 2 µA @ 16000 V 16000 V 5mA -40°C ~ 120°C 60 V @ 10 mA
DSEI8-06A

DSEI8-06A

DIODE GEN PURP 600V 8A TO220AC

IXYS
858 -

RFQ

DSEI8-06A

Ficha técnica

Tube FRED RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 20 µA @ 600 V 600 V 8A -40°C ~ 150°C 1.5 V @ 8 A
PPS1060

PPS1060

SCHOTTKY TO-277B 60V 10A

Diotec Semiconductor
5,000 -

RFQ

PPS1060

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 60 V 60 V 10A -50°C ~ 150°C 630 mV @ 10 A
BYT79-600,127

BYT79-600,127

DIODE GEN PURP 600V 15A TO220AC

WeEn Semiconductors
312 -

RFQ

BYT79-600,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 50 µA @ 600 V 600 V 15A 150°C (Max) 1.38 V @ 15 A
UF600D

UF600D

DIODE UFR D8X7.5 200V 6A

Diotec Semiconductor
102,500 -

RFQ

UF600D

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 200 V 200 V 6A -50°C ~ 175°C 1 V @ 5 A
MBR760

MBR760

DIODE SCHOTTKY 60V 7.5A TO220AC

onsemi
499 -

RFQ

MBR760

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 7.5A -65°C ~ 150°C 750 mV @ 7.5 A
UF600A

UF600A

DIODE UFR D8X7.5 50V 6A

Diotec Semiconductor
2,000 -

RFQ

UF600A

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 50 V 50 V 6A -50°C ~ 175°C 1 V @ 5 A
VS-19TQ015-M3

VS-19TQ015-M3

DIODE SCHOTTKY 15V 19A TO220AC

Vishay General Semiconductor - Diodes Division
3,835 -

RFQ

VS-19TQ015-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 2000pF @ 5V, 1MHz - 10.5 mA @ 15 V 15 V 19A -55°C ~ 125°C 460 mV @ 38 A
UF600J

UF600J

DIODE UFR D8X7.5 600V 6A

Diotec Semiconductor
7,500 -

RFQ

UF600J

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 10 µA @ 600 V 600 V 6A -50°C ~ 175°C 1.7 V @ 5 A
STPS10L25D

STPS10L25D

DIODE SCHOTTKY 25V 10A TO220AC

STMicroelectronics
643 -

RFQ

STPS10L25D

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 800 µA @ 25 V 25 V 10A 150°C (Max) 460 mV @ 10 A
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário