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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HSR101-01TRE-ERECTIFIER DIODE, SCHOTTKY Rochester Electronics, LLC |
2,734,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
SCS302AHGC9SHORTER RECOVERY TIME, ENABLING Rohm Semiconductor |
832 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 110pF @ 1V, 1MHz | 0 ns | 10.8 µA @ 650 V | 650 V | 2.15A (DC) | 175°C (Max) | 1.5 V @ 2 A | |
|
FMKA140RECTIFIER DIODE Rochester Electronics, LLC |
88,509 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1 mA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 600 mV @ 1 A | |
|
VS-HFA25TB60-M3DIODE FRED 600V 25A TO220AC Vishay General Semiconductor - Diodes Division |
803 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 20 µA @ 600 V | 600 V | 25A | -55°C ~ 150°C | 2 V @ 50 A |
|
|
HSB88WKTL-ERECTIFIER DIODE, 0.015A, 10V Rochester Electronics, LLC |
27,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
FESF16JT-E3/45DIODE GEN PURP 600V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
998 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A | |
|
|
HSB88YPTR-ERECTIFIER DIODE, 0.015A, 10V Rochester Electronics, LLC |
27,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
RURP3060DIODE GEN PURP 600V 30A TO220-2 onsemi |
3,053 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 250 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 1.5 V @ 30 A | |
|
|
HVM189STL-EPIN DIODE Rochester Electronics, LLC |
12,000 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
HS2AADIODE GEN PURP 50V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,420 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | ||
|
UPS160/TR7DIODE SCHOTTKY 60V 1A POWERMITE Microchip Technology |
3,143 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 100 µA @ 60 V | 60 V | 1A | -55°C ~ 125°C | 600 mV @ 1 A | |
|
|
SD060SC200A.T1PIV 200V IO 3A CHIP SIZE 60MIL S SMC Diode Solutions |
3,454 | - |
RFQ |
Ficha técnica |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 60pF @ 5V, 1MHz | - | 70 µA @ 200 V | 200 V | 3A | -55°C ~ 200°C | 920 mV @ 3 A | |
|
1N5418-TAPDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,841 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 200 V | 400 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |
|
S10GC V6GDIODE GEN PURP 400V 10A DO214AB Taiwan Semiconductor Corporation |
2,844 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | - | |
|
MBRB1060HE3_B/IDIODE SCHOTTKY 60V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,698 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A |
|
|
HS2BADIODE GEN PURP 100V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,958 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | ||
|
|
1N5417-TAPDIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,696 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |
|
SR1040 C0GDIODE SCHOTTKY 40V 10A TO220AB Taiwan Semiconductor Corporation |
2,607 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 10A | -55°C ~ 125°C | 550 mV @ 5 A | |
|
|
BY228-13TAPDIODE AVALANCHE 1KV 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,948 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 2 µs | 5 µA @ 1000 V | 1000 V | 3A | 140°C (Max) | 1.5 V @ 5 A | |
|
|
S10JC V6GDIODE GEN PURP 600V 10A DO214AB Taiwan Semiconductor Corporation |
2,916 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | - |
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