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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5314UR-1CURRENT REGULATOR DIODE Microchip Technology |
2,647 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
JANTXV1N5711-1/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
2,253 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/444 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Through Hole | 2pF @ 0V, 1MHz | - | 200 nA @ 50 V | 50 V | 33mA | -65°C ~ 150°C | 1 V @ 15 mA | |
|
|
VS-50PF80DIODE GEN PURP 800V 50A DO203AB Vishay General Semiconductor - Diodes Division |
3,324 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 800 V | 50A | -55°C ~ 180°C | 1.4 V @ 125 A | |
|
JANTX1N6630US/TRRECTIFIER UFR,FRR Microchip Technology |
3,860 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 2 µA @ 900 V | 900 V | 1.4A | -65°C ~ 150°C | 1.4 V @ 1.4 A | |
|
JAN1N5551/TRSTD RECTIFIER Microchip Technology |
3,328 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A |
|
|
VS-40HF120MDIODE GEN PURP 1.2KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,060 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1200 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
1N5312UR-1/TRCURRENT REGULATOR Microchip Technology |
3,317 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | - | 100 V | 4.29A | -65°C ~ 175°C | 2.6 V @ 2.808 A | |
|
UES1106SM/TRRECTIFIER UFR,FRR Microchip Technology |
3,404 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | - | 400 V | 2A | - | 1.25 V @ 1 A | ||
|
|
VS-50PFR80DIODE GEN PURP 800V 50A DO203AB Vishay General Semiconductor - Diodes Division |
3,068 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 800 V | 50A | -65°C ~ 190°C | 1.4 V @ 125 A | |
|
|
JANTXV1N6076DIODE GEN PURP 50V 1.3A AXIAL Microchip Technology |
3,127 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/503 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 1 µA @ 50 V | 50 V | 1.3A | -65°C ~ 155°C | 1.76 V @ 18.8 A |
|
|
S25BDIODE GEN PURP 100V 25A DO203AA GeneSiC Semiconductor |
2,434 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 100 V | 25A | -65°C ~ 175°C | 1.1 V @ 25 A | |
|
|
VS-40HFR100MDIODE GEN PURP 1KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,786 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1000 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
1N5305-1/TRCURRENT REGULATOR Microchip Technology |
2,631 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 2.2A | -65°C ~ 175°C | 1.85 V @ 1.6 A | |
|
|
UES1105SM/TRRECTIFIER UFR,FRR Microchip Technology |
2,796 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | - | 300 V | 2A | - | 1.25 V @ 1 A | ||
|
|
JAN1N6638DIODE GEN PURP 150V 300MA AXIAL Microchip Technology |
2,089 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 2.5pF @ 0V, 1MHz | 20 ns | 500 nA @ 150 V | 150 V | 300mA | -65°C ~ 175°C | 1.1 V @ 200 mA |
|
UF4004-M3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,514 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
JANTXV1N6077DIODE GEN PURP 100V 1.3A AXIAL Microchip Technology |
2,054 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/503 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 1 µA @ 100 V | 100 V | 1.3A | -65°C ~ 155°C | 1.76 V @ 18.8 A |
|
|
SD530S_L2_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
3,289 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 5A | -55°C ~ 125°C | 550 mV @ 5 A | ||
|
|
S25BRDIODE GEN PURP 100V 25A DO220AA GeneSiC Semiconductor |
2,004 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 100 V | 25A | -65°C ~ 175°C | 1.1 V @ 25 A | |
|
SK315TRDIODE SCHOTTKY 150V 3A SMC SMC Diode Solutions |
3,904 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 100pF @ 5V, 1MHz | - | 1 mA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 890 mV @ 3 A |
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