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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAS21LSYLBAS21LS/SOD882BD/XSON2 Nexperia USA Inc. |
3,379 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 150°C | 1.25 V @ 200 mA |
|
RS3M V6GDIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,255 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 500 ns | 10 µA @ 1000 V | - | 3A | -55°C ~ 150°C | - | |
|
BAS16WS-G3-18DIODE GEN PURP 75V 250MA SOD323 Vishay General Semiconductor - Diodes Division |
3,136 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 75 V | 250mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
SSB43L-M3/5BTDIODE SCHOTTKY 4A 30V DO-214AC Vishay General Semiconductor - Diodes Division |
2,914 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 30 V | 30 V | 4A | -65°C ~ 150°C | 490 mV @ 4 A | ||
|
S306100RECTIFIER Microchip Technology |
2,786 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
JANKCE1N5804RECTIFIER UFR,FRR Microchip Technology |
3,948 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A | |
|
JANTXV1N6642UBCC/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,382 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 500 nA @ 75 V | 75 V | 300mA | -65°C ~ 175°C | 1.2 V @ 100 mA | |
|
|
1N6642US/TRSWITCHING Microchip Technology |
3,066 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 5 ns | 500 nA @ 75 V | 75 V | 300mA | -65°C ~ 175°C | 1.2 V @ 100 mA | |
|
|
CD5806RECTIFIER UFR,FRR Microchip Technology |
3,182 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
1N6076DIODE GEN PURP 50V 6A AXIAL Semtech Corporation |
2,714 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 5V, 1MHz | 30 ns | 5 µA @ 50 V | 50 V | 6A | -65°C ~ 150°C | 1.2 V @ 3 A | |
|
BAS19-G3-18DIODE GEN PURP 100V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,164 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
SSB43L-M3/52TDIODE SCHOTTKY 4A 30V DO-214AA Vishay General Semiconductor - Diodes Division |
3,078 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 30 V | 30 V | 4A | -65°C ~ 150°C | 450 mV @ 4 A | ||
|
|
BAS20-G3-18DIODE GEN PURP 150V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,896 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
EGL41A-E3/96DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,247 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
BAS21-G3-18DIODE GEN PURP 200V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,549 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
|
EGL41F-E3/96DIODE GEN PURP 300V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,003 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
|
BAS19-G3-08DIODE GEN PURP 100V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
2,366 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
SS15DIODE SCHOTTKY 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,823 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 750 mV @ 1 A | ||
|
|
S306120RECTIFIER Microchip Technology |
2,024 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
BAS20-G3-08DIODE GEN PURP 150V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,015 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA |
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