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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N1206BSTANDARD RECTIFIER Microchip Technology |
2,775 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
JANTX1N5306-1/TRCURRENT REGULATOR Microchip Technology |
2,305 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
|
VS-80PFR140DIODE GEN PURP 1.4KV 80A DO203AB Vishay General Semiconductor - Diodes Division |
3,200 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1400 V | 80A | -55°C ~ 150°C | 1.46 V @ 220 A | |
|
VS-12FL60S05DIODE GEN PURP 600V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,085 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 50 µA @ 600 V | 600 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
|
JANTXV1N6627UDIODE GEN PURP 400V 1.75A E-MELF Microchip Technology |
3,826 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 2 µA @ 400 V | 400 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
FR85JR02DIODE GEN PURP REV 600V 85A DO5 GeneSiC Semiconductor |
2,952 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 250 ns | 25 µA @ 100 V | 600 V | 85A | -40°C ~ 125°C | 1.4 V @ 85 A | |
|
|
1N1200ARSTANDARD RECTIFIER Microchip Technology |
3,873 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
JANTX1N5312-1/TRCURRENT REGULATOR Microchip Technology |
3,889 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
|
FR6KR05DIODE GEN PURP REV 800V 6A DO4 GeneSiC Semiconductor |
3,826 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 50 V | 800 V | 6A | -65°C ~ 150°C | 1.4 V @ 6 A | |
|
|
VS-12FLR60S05DIODE GEN PURP 600V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,460 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 50 µA @ 600 V | 600 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
PR1001-TDIODE GEN PURP 50V 1A DO41 Diodes Incorporated |
2,401 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A | |
|
S5G-M3/57TDIODE GPP 5A 400V DO-214AB Vishay General Semiconductor - Diodes Division |
3,019 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
RB520S-30 RSGDIODE SCHOTTKY 30V 200MA SOD523F Taiwan Semiconductor Corporation |
3,893 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 1 µA @ 10 V | 30 V | 200mA | -55°C ~ 125°C | 600 mV @ 200 mA | |
|
|
S5J-M3/57TDIODE GPP 5A 600V DO-214AB Vishay General Semiconductor - Diodes Division |
2,407 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
FR101GTADIODE GPP 50V 1A DO41 SMC Diode Solutions |
2,357 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 35 V | 50 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | |
|
|
S5K-M3/57TDIODE GPP 5A 800V DO-214AB Vishay General Semiconductor - Diodes Division |
2,564 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 800 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
FR102GTADIODE GPP 100V 1A DO41 SMC Diode Solutions |
3,750 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 70 V | 100 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | |
|
|
JANTX1N6628UDIODE GEN PURP 600V 1.75A E-MELF Microchip Technology |
3,825 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 2 µA @ 600 V | 600 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
|
S304120DIODE GEN PURP 1.2KV 40A DO5 Microchip Technology |
2,744 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 5 µs | 10 µA @ 1200 V | 1200 V | 40A | - | 1.9 V @ 40 A | ||
|
|
S5M-M3/57TDIODE GPP 5A 1000V DO-214AB Vishay General Semiconductor - Diodes Division |
3,058 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 250 µA @ 1000 V | 1000 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A |
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