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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S3D-M3/57TDIODE GPP 3A 200V DO-214AB Vishay General Semiconductor - Diodes Division |
3,794 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
FR1BTADIODE GEN PURP 100V 1A SMB SMC Diode Solutions |
2,020 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -50°C ~ 150°C | 1.3 V @ 1 A | |
|
|
S3G-M3/57TDIODE GPP 3A 400V DO-214AB Vishay General Semiconductor - Diodes Division |
2,719 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
|
FR1DTADIODE GEN PURP 200V 1A SMB SMC Diode Solutions |
3,536 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -50°C ~ 150°C | 1.3 V @ 1 A | |
|
|
S3J-M3/57TDIODE GPP 3A 600V DO-214AB Vishay General Semiconductor - Diodes Division |
3,521 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
|
FR1GTADIODE GEN PURP 400V 1A SMB SMC Diode Solutions |
2,995 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -50°C ~ 150°C | 1.3 V @ 1 A | |
|
|
S3K-M3/57TDIODE GPP 3A 800V DO-214AB Vishay General Semiconductor - Diodes Division |
2,415 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
|
FR1JTADIODE GEN PURP 600V 1A SMB SMC Diode Solutions |
3,091 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -50°C ~ 150°C | 1.3 V @ 1 A | |
|
|
S3M-M3/57TDIODE GPP 3A 1000V DO-214AB Vishay General Semiconductor - Diodes Division |
2,208 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
|
FR1KTADIODE GEN PURP 800V 1A SMB SMC Diode Solutions |
3,770 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -50°C ~ 150°C | 1.3 V @ 1 A | |
|
|
S3A-M3/9ATDIODE GPP 3A 50V DO-214AB Vishay General Semiconductor - Diodes Division |
2,222 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
BAS70,235DIODE SCHOTTKY 70V 70MA TO236AB Nexperia USA Inc. |
3,802 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 10 µA @ 70 V | 70 V | 70mA (DC) | 150°C (Max) | 1 V @ 15 mA | |
|
|
S3B-M3/9ATDIODE GPP 3A 100V DO-214AB Vishay General Semiconductor - Diodes Division |
2,345 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
BAS116LSYLBAS116LS/SOD882BD/XSON2 Nexperia USA Inc. |
2,316 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 3 µs | 5 nA @ 75 V | 85 V | 325mA (DC) | 150°C | 1.25 V @ 150 mA | ||
|
|
S3D-M3/9ATDIODE GPP 3A 200V DO-214AB Vishay General Semiconductor - Diodes Division |
2,546 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
1N4005GDIODE GEN PURP 600V 1A DO41 SMC Diode Solutions |
3,783 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
|
|
S3G-M3/9ATDIODE GPP 3A 400V DO-214AB Vishay General Semiconductor - Diodes Division |
3,277 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
|
1N4006GDIODE GEN PURP 800V 1A DO41 SMC Diode Solutions |
3,035 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
|
|
S3J-M3/9ATDIODE GPP 3A 600V DO-214AB Vishay General Semiconductor - Diodes Division |
3,346 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
|
BAS316,H3FDIODE GEN PURP 100V 250MA USC Toshiba Semiconductor and Storage |
3,622 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 0.35pF @ 0V, 1MHz | 3 ns | 200 nA @ 80 V | 100 V | 250mA | 150°C (Max) | 1.25 V @ 150 mA |
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