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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S3K-M3/9ATDIODE GPP 3A 800V DO-214AB Vishay General Semiconductor - Diodes Division |
2,074 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
BAS516,H3FDIODE GEN PURP 100V 250MA ESC Toshiba Semiconductor and Storage |
3,504 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 0.35pF @ 0V, 1MHz | 3 ns | 200 nA @ 80 V | 100 V | 250mA | 150°C (Max) | 1.25 V @ 150 mA | |
|
|
S3M-M3/9ATDIODE GPP 3A 1000V DO-214AB Vishay General Semiconductor - Diodes Division |
3,296 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
|
CDBVRL140-HFDIODE SCHOTTKY 40V 1A 0603/DFN16 Comchip Technology |
3,968 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 1V, 1MHz | 15 ns | 50 µA @ 40 V | 40 V | 1A | 125°C | 550 mV @ 700 mA | |
|
|
S5A-M3/57TDIODE GPP 5A 50V DO-214AB Vishay General Semiconductor - Diodes Division |
3,954 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
1PS76SB10ZDIODE SCHOTTKY 30V 200MA SOD323 Nexperia USA Inc. |
3,866 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | - | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA |
|
|
S5B-M3/57TDIODE GPP 5A 100V DO-214AB Vishay General Semiconductor - Diodes Division |
3,469 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
BAV301-TR3DIODE GP 100V 250MA MICROMELF Vishay General Semiconductor - Diodes Division |
3,747 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
|
S5D-M3/57TDIODE GPP 5A 200V DO-214AB Vishay General Semiconductor - Diodes Division |
2,329 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
JANTX1N5302-1/TRCURRENT REGULATOR Microchip Technology |
2,840 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
|
1N5804E3RECTIFIER UFR,FRR Microchip Technology |
3,576 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A |
|
1N5806USE3UFR,FRR Microchip Technology |
3,362 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 975 mV @ 2.5 A | |
|
VS-T40HF20DIODE GEN PURP 200V 40A D-55 Vishay General Semiconductor - Diodes Division |
2,081 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 15 mA @ 200 V | 200 V | 40A | - | - | |
|
|
VS-T110HF60DIODE GEN PURP 600V 110A D-55 Vishay General Semiconductor - Diodes Division |
2,319 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 600 V | 600 V | 110A | - | - | |
|
|
1N1205BSTANDARD RECTIFIER Microchip Technology |
3,354 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
JANTX1N5300-1/TRCURRENT REGULATOR Microchip Technology |
3,810 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
NDSH20120CSIC DIODE GEN2.0 1200V TO onsemi |
2,989 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1480pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 26A (DC) | -55°C ~ 175°C | 1.75 V @ 20 A | |
|
|
MSC015SDA120KSIC SBD 1200 V 15 A TO-220 Microchip Technology |
3,517 | - |
RFQ |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 906pF @ 1V, 1MHz | 0 ns | 200 µA @ 200 µA | 1200 V | 36A (DC) | -55°C ~ 175°C | 1.8 V @ 15 A | ||
|
|
JANTXV1N6626UDIODE GEN PURP 200V 1.75A E-MELF Microchip Technology |
2,615 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 2 µA @ 200 V | 200 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
|
VS-VSKE56/04DIODE GEN PURP 400V 60A ADDAPAK Vishay General Semiconductor - Diodes Division |
2,524 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 10 mA @ 400 V | 400 V | 60A | -40°C ~ 150°C | - |
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