Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
MBR6020R

MBR6020R

DIODE SCHOTTKY REV 20V DO5

GeneSiC Semiconductor
3,572 -

RFQ

MBR6020R

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky, Reverse Polarity Active Chassis, Stud Mount - - 5 mA @ 20 V 20 V 60A -65°C ~ 150°C 650 mV @ 60 A
JANHCA1N6761

JANHCA1N6761

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology
3,964 -

RFQ

JANHCA1N6761

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 1A -55°C ~ 125°C 690 mV @ 1 A
3SM4

3SM4

DIODE GEN PURP 400V 5A AXIAL

Semtech Corporation
3,105 -

RFQ

3SM4

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 400 V 400 V 5A - 1 V @ 3 A
JANTX1N5303-1/TR

JANTX1N5303-1/TR

CURRENT REGULATOR

Microchip Technology
3,631 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
VS-95PF80W

VS-95PF80W

DIODE GEN PURP 800V 95A DO203AB

Vishay General Semiconductor - Diodes Division
2,840 -

RFQ

VS-95PF80W

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - - 800 V 95A -55°C ~ 180°C 1.4 V @ 267 A
FR6G05

FR6G05

DIODE GEN PURP 400V 16A DO4

GeneSiC Semiconductor
3,308 -

RFQ

FR6G05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 50 V 400 V 16A -65°C ~ 150°C 1.4 V @ 6 A
MBR6030R

MBR6030R

DIODE SCHOTTKY REV 30V DO5

GeneSiC Semiconductor
2,018 -

RFQ

MBR6030R

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky, Reverse Polarity Active Chassis, Stud Mount - - 5 mA @ 20 V 30 V 60A -65°C ~ 150°C 650 mV @ 60 A
JANTX1N1204AR

JANTX1N1204AR

DIODE GEN PURP 400V 12A DO203AA

Microchip Technology
2,169 -

RFQ

JANTX1N1204AR

Ficha técnica

Bulk Military, MIL-PRF-19500/260 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Stud Mount - - 5 µA @ 400 V 400 V 12A -65°C ~ 150°C 2.3 V @ 240 A
3SM6

3SM6

DIODE GEN PURP 600V 5A AXIAL

Semtech Corporation
2,790 -

RFQ

3SM6

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 600 V 600 V 5A - 1 V @ 3 A
JANTX1N5292-1/TR

JANTX1N5292-1/TR

CURRENT REGULATOR

Microchip Technology
3,444 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
VS-95PFR80W

VS-95PFR80W

DIODE GEN PURP 800V 95A DO203AB

Vishay General Semiconductor - Diodes Division
2,848 -

RFQ

VS-95PFR80W

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - - 800 V 95A -55°C ~ 180°C 1.4 V @ 267 A
FR6J02

FR6J02

DIODE GEN PURP 600V 6A DO4

GeneSiC Semiconductor
3,907 -

RFQ

FR6J02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 250 ns 25 µA @ 50 V 600 V 6A -65°C ~ 150°C 1.4 V @ 6 A
MBR6035R

MBR6035R

DIODE SCHOTTKY REV 35V DO5

GeneSiC Semiconductor
2,994 -

RFQ

MBR6035R

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky, Reverse Polarity Active Chassis, Stud Mount - - 5 mA @ 20 V 35 V 60A -65°C ~ 150°C 650 mV @ 60 A
JANTX1N1206A

JANTX1N1206A

DIODE GEN PURP 600V 12A DO203AA

Microchip Technology
3,247 -

RFQ

JANTX1N1206A

Ficha técnica

Bulk Military, MIL-PRF-19500/260 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 5 µA @ 600 V 600 V 12A -65°C ~ 150°C 1.35 V @ 38 A
JANTX1N5308-1/TR

JANTX1N5308-1/TR

CURRENT REGULATOR

Microchip Technology
3,253 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
JANTX1N5418

JANTX1N5418

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology
2,526 -

RFQ

JANTX1N5418

Ficha técnica

Bulk Military, MIL-PRF-19500/411 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 150 ns 1 µA @ 400 V 400 V 3A -65°C ~ 175°C 1.5 V @ 9 A
FR6J05

FR6J05

DIODE GEN PURP 600V 6A DO4

GeneSiC Semiconductor
2,871 -

RFQ

FR6J05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 50 V 600 V 6A -65°C ~ 150°C 1.4 V @ 6 A
MBR6040R

MBR6040R

DIODE SCHOTTKY REV 40V DO5

GeneSiC Semiconductor
2,776 -

RFQ

MBR6040R

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky, Reverse Polarity Active Chassis, Stud Mount - - 5 mA @ 20 V 40 V 60A -65°C ~ 150°C 650 mV @ 60 A
JAN1N5285-1/TR

JAN1N5285-1/TR

CURRENT REGULATOR

Microchip Technology
3,267 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
JANTX1N5293-1/TR

JANTX1N5293-1/TR

CURRENT REGULATOR

Microchip Technology
2,008 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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