Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SK320B R5G

SK320B R5G

DIODE SCHOTTKY 200V 3A DO214AA

Taiwan Semiconductor Corporation
138 -

RFQ

SK320B R5G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
TST30L60CW C0G

TST30L60CW C0G

DIODE SCHOTTKY 60V 15A TO220AB

Taiwan Semiconductor Corporation
877 -

RFQ

TST30L60CW C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 15A -55°C ~ 150°C 600 mV @ 15 A
SS1H20LS RVG

SS1H20LS RVG

DIODE SCHOTTKY 200V 1A SOD123HE

Taiwan Semiconductor Corporation
2,501 -

RFQ

SS1H20LS RVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1 µA @ 200 V 200 V 1A -55°C ~ 150°C 850 mV @ 1 A
TST40L100CW C0G

TST40L100CW C0G

DIODE SCHOTTKY 100V 20A TO220AB

Taiwan Semiconductor Corporation
851 -

RFQ

TST40L100CW C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 200 µA @ 100 V 100 V 20A -55°C ~ 150°C 750 mV @ 20 A
TST30H150CW C0G

TST30H150CW C0G

DIODE SCHOTTKY 150V 15A TO220AB

Taiwan Semiconductor Corporation
911 -

RFQ

TST30H150CW C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 150 µA @ 150 V 150 V 15A -55°C ~ 150°C 900 mV @ 15 A
SF3008PT C0G

SF3008PT C0G

DIODE GEN PURP 600V 30A TO247AD

Taiwan Semiconductor Corporation
710 -

RFQ

SF3008PT C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 30A -55°C ~ 150°C 1.7 V @ 15 A
TST30U60C C0G

TST30U60C C0G

DIODE SCHOTTKY 60V 15A TO220AB

Taiwan Semiconductor Corporation
800 -

RFQ

TST30U60C C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 15A -55°C ~ 150°C 570 mV @ 15 A
SRAS2040 RNG

SRAS2040 RNG

20A, 20V - 150V SURFACE MOUNT SC

Taiwan Semiconductor Corporation
686 -

RFQ

SRAS2040 RNG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 40 V 40 V 20A - 570 mV @ 20 A
B0540W RHG

B0540W RHG

DIODE SCHOTTKY 40V 500MA SOD123

Taiwan Semiconductor Corporation
2,603 -

RFQ

B0540W RHG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 170pF @ 0V, 1MHz - 20 µA @ 40 V 40 V 500mA -55°C ~ 125°C 510 mV @ 500 mA
LL4004G L0G

LL4004G L0G

DIODE GEN PURP 400V 1A MELF

Taiwan Semiconductor Corporation
3,744 -

RFQ

LL4004G L0G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -65°C ~ 150°C 1.1 V @ 30 A
S1ML

S1ML

DIODE GEN PURP 1KV 1A SUB SMA

Taiwan Semiconductor Corporation
2,213 -

RFQ

S1ML

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Not For New Designs Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 1000 V 1000 V 1A -55°C ~ 175°C 1.1 V @ 1 A
HS3A R7G

HS3A R7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation
450 -

RFQ

HS3A R7G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 1 V @ 3 A
ESJLWHRVG

ESJLWHRVG

DIODE, SUPER FAST

Taiwan Semiconductor Corporation
186 -

RFQ

ESJLWHRVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 19pF @ 4V, 1MHz 35 ns 1 µA @ 600 V 600 V 800mA -55°C ~ 150°C 1.7 V @ 800 mA
HS3G R7G

HS3G R7G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation
120 -

RFQ

HS3G R7G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.3 V @ 3 A
S4M R7G

S4M R7G

DIODE GEN PURP 1KV 4A DO214AB

Taiwan Semiconductor Corporation
120 -

RFQ

S4M R7G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 4A -55°C ~ 150°C 1.15 V @ 4 A
S2A R5G

S2A R5G

DIODE GEN PURP 50V 2A DO214AA

Taiwan Semiconductor Corporation
564 -

RFQ

S2A R5G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 1.5 µs 1 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.15 V @ 2 A
SR110 A0G

SR110 A0G

DIODE SCHOTTKY 100V 1A DO204AL

Taiwan Semiconductor Corporation
556 -

RFQ

SR110 A0G

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 1A -55°C ~ 150°C 800 mV @ 1 A
SS110LS RVG

SS110LS RVG

DIODE SCHOTTKY 100V 1A SOD123HE

Taiwan Semiconductor Corporation
3,752 -

RFQ

SS110LS RVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 80pF @ 4V, 1MHz - 50 µA @ 100 V 100 V 1A -55°C ~ 150°C 800 mV @ 1 A
TPAU3J S1G

TPAU3J S1G

DIODE AVALANCHE 600V 3A TO277A

Taiwan Semiconductor Corporation
3,247 -

RFQ

TPAU3J S1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount 60pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 3A -55°C ~ 175°C 1.88 V @ 3 A
ES1GL RVG

ES1GL RVG

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation
2,277 -

RFQ

ES1GL RVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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