Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
UF1KHR1G

UF1KHR1G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation
2,586 -

RFQ

UF1KHR1G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF1M R1G

UF1M R1G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation
2,168 -

RFQ

UF1M R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
UF1MHR1G

UF1MHR1G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation
2,117 -

RFQ

UF1MHR1G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4001 R1G

UF4001 R1G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation
3,444 -

RFQ

UF4001 R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4001HR1G

UF4001HR1G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation
3,107 -

RFQ

UF4001HR1G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4002 R1G

UF4002 R1G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation
2,020 -

RFQ

UF4002 R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4002HR1G

UF4002HR1G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation
3,285 -

RFQ

UF4002HR1G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4003 R1G

UF4003 R1G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation
2,950 -

RFQ

UF4003 R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4003HR1G

UF4003HR1G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation
3,963 -

RFQ

UF4003HR1G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4004 R1G

UF4004 R1G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation
3,136 -

RFQ

UF4004 R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4004HR1G

UF4004HR1G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation
2,279 -

RFQ

UF4004HR1G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4005 R1G

UF4005 R1G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation
3,446 -

RFQ

UF4005 R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4005HR1G

UF4005HR1G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation
3,111 -

RFQ

UF4005HR1G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4006 R1G

UF4006 R1G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation
3,553 -

RFQ

UF4006 R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4006HR1G

UF4006HR1G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation
2,736 -

RFQ

UF4006HR1G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4007 R1G

UF4007 R1G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation
2,609 -

RFQ

UF4007 R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
BAT54 RFG

BAT54 RFG

DIODE SCHOTTKY 30V 200MA SOT23

Taiwan Semiconductor Corporation
2,035 -

RFQ

BAT54 RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 10pF @ 1V, 1MHz 5 ns 2 µA @ 25 V 30 V 200mA -55°C ~ 125°C 1 V @ 100 mA
UF4007HR1G

UF4007HR1G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation
3,046 -

RFQ

UF4007HR1G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
ES1AL RHG

ES1AL RHG

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation
3,897 -

RFQ

ES1AL RHG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 1V, 1MHz 35 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 950 mV @ 1 A
ES1ALHRHG

ES1ALHRHG

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation
3,701 -

RFQ

ES1ALHRHG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 950 mV @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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