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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S8MCHM6GDIODE GEN PURP 8A DO214AB Taiwan Semiconductor Corporation |
3,642 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 1000 V | - | 8A | -55°C ~ 150°C | 985 mV @ 8 A |
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|
UGS5J MNGDIODE GEN PURP 600V 5A TO263AB Taiwan Semiconductor Corporation |
3,562 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 20 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 2 V @ 5 A | |
|
ES1JLHMQGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,745 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
ES2HM4GDIODE GEN PURP 500V 2A DO214AA Taiwan Semiconductor Corporation |
3,101 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
|
SK510C M6GDIODE SCHOTTKY 100V 5A DO214AB Taiwan Semiconductor Corporation |
3,301 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | |
|
|
ES1AL MQGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,204 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
ES1JLHMTGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,965 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
ES3DBHM4GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
3,494 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 46pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
SK510CHM6GDIODE SCHOTTKY 100V 5A DO214AB Taiwan Semiconductor Corporation |
2,039 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A |
|
|
ES1AL MTGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,712 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
ES1JLHRQGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,071 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
ES3HB M4GDIODE GEN PURP 500V 3A DO214AA Taiwan Semiconductor Corporation |
2,951 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 34pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 3A | -55°C ~ 150°C | 1.45 V @ 3 A | |
|
|
SK515C M6GDIODE SCHOTTKY 150V 5A DO214AB Taiwan Semiconductor Corporation |
2,656 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 950 mV @ 5 A | |
|
|
ES1AL RQGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
2,427 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
ES1JLHRTGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,562 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
ES3HBHM4GDIODE GEN PURP 500V 3A DO214AA Taiwan Semiconductor Corporation |
3,832 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A |
|
|
SK515CHM6GDIODE SCHOTTKY 150V 5A DO214AB Taiwan Semiconductor Corporation |
3,247 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 950 mV @ 5 A |
|
|
ES1AL RTGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
2,742 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS1AL MQGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,621 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
HS1A M2GDIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,126 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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