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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S5J M6GDIODE GEN PURP 600V 5A DO214AB Taiwan Semiconductor Corporation |
3,830 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
ES1GLHRQGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
2,723 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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|
SRAS830 MNGDIODE SCHOTTKY 30V 8A TO263AB Taiwan Semiconductor Corporation |
3,487 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
|
|
ES2AHM4GDIODE GEN PURP 50V 2A DO214AA Taiwan Semiconductor Corporation |
3,867 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
S5K M6GDIODE GEN PURP 800V 5A DO214AB Taiwan Semiconductor Corporation |
3,539 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 800 V | 800 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
ES1GLHRTGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
3,842 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SRAS830HMNGDIODE SCHOTTKY 30V 8A TO263AB Taiwan Semiconductor Corporation |
2,937 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
|
|
ES2B M4GDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
2,975 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
S5M M6GDIODE GEN PURP 5A DO214AB Taiwan Semiconductor Corporation |
3,402 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | - | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
ES1HL MQGDIODE GEN PURP 500V 1A SUB SMA Taiwan Semiconductor Corporation |
2,230 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
SRAS840 MNGDIODE SCHOTTKY 40V 8A TO263AB Taiwan Semiconductor Corporation |
2,888 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | |
|
ES2BA M2GDIODE GEN PURP 100V 2A DO214AC Taiwan Semiconductor Corporation |
2,087 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
S8GC M6GDIODE GEN PURP 400V 8A DO214AB Taiwan Semiconductor Corporation |
3,184 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A | |
|
|
ES1HL MTGDIODE GEN PURP 500V 1A SUB SMA Taiwan Semiconductor Corporation |
2,740 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
SRAS840HMNGDIODE SCHOTTKY 40V 8A TO263AB Taiwan Semiconductor Corporation |
2,725 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A |
|
|
ES2BAHM2GDIODE GEN PURP 100V 2A DO214AC Taiwan Semiconductor Corporation |
2,853 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
S8GCHM6GDIODE GEN PURP 400V 8A DO214AB Taiwan Semiconductor Corporation |
2,049 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A |
|
|
SRAS850 MNGDIODE SCHOTTKY 50V 8A TO263AB Taiwan Semiconductor Corporation |
2,289 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 700 mV @ 8 A | |
|
|
ES1HL RQGDIODE GEN PURP 500V 1A SUB SMA Taiwan Semiconductor Corporation |
3,039 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
ES2BHM4GDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
2,051 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
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